Design of Electrostatic Deflectors Applied in DY-2001A Electron Beam Lithography System

刘珠明,顾文琪,李艳秋
2004-01-01
Abstract:Based on JSM-35CF scaning microscope,we design a set of electrostatic deflectors with different lengths. Compared with conventional deflectors with the same lengths,the deflectors we designed are of higher sensitivity. We compute the field in electrostatic deflectors using the second-order finite element method.High-accuracy field make us compute high-order aberrations conveniently.In order to make the system has the lowest aberrations we optimized the optical properties using the least squares method, including the third-order and fifth-order aberrations by varying the axial positions, relative strengths and the rotation angles of the deflectors. Resolution of the system is 3.2 nm in field with 80 μm×80 μm and 29.8 nm in field with 1 mm×1 mm. Results from the simulation show that the resolution of the electron beam system with these electrostatic deflectors meets the requirement of the nanometer lithography.
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