The Study of the Buckling Phenomenon in the Metal Insulator Transition Process of Vanadium Dioxide Nanowires

DING Wen-qiang,ZHANG Zhen-hua,GUO Zhen-xi,SUI Man-ling
DOI: https://doi.org/10.3969/j.1000-6281.2014.05.005
2014-01-01
Abstract:VO2 nanowires were synthesized successfully with method of vapor transportation. Technologies including SEM and TEM were applied to characterize the morphology and structure of nanowires in order to determine the growing state of nanowires. The results show that during the in-situ heating of nanowires under TEM,obvious buckling is observed if MIT nucleation localization is introduced before. It is found that the buckling is induced by the internal strain from lattices distortion with a sloping phase boundary,which is also verified by the in-situ heating VO2 nanowires bounded on silicon substrate under light microscopy.
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