Novel Temperature Stable High-Epsilon(R) Microwave Dielectrics In The Bi2o3-Tio2-V2o5 System

Di Zhou,Dan Guo,Wen-Bo Li,Li-Xia Pang,Xi Yao,Da-Wei Wang,Ian M. Reaney

DOI: https://doi.org/10.1039/c6tc01431c

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:In the present work, a series of low temperature firing (1-x)BiVO4-xTiO2 (x = 0.4, 0.50, 0.55 and 0.60) microwave dielectric ceramics was prepared using traditional solid state reaction method. From backscattered electron images (BEI), X-ray diffraction (XRD) and energy dispersive analysis (EDS), there was negligible reaction between BiVO4 and TiO2 at the optimal sintering temperature similar to 900 degrees C. As x increased from 0.4 to 0.60, permittivity (epsilon(r)) increased from 81.8 to 87.7, quality factor value (Q(f)) decreased from 12 290 to 8240 GHz and temperature coefficient (TCF) shifted from -121 to +46 ppm per degrees C. Temperature stable microwave dielectric ceramic was obtained in 0.45BiVO(4)-0.55TiO(2) composition sintered at 900 degrees C with a epsilon(r) similar to 86, a Q(f) similar to 9500 GHz and a TCF similar to -8 ppm per degrees C. Far-infrared reflectivity fitting indicated that stretching of Bi-O and Ti-O bonds in this system dominated dielectric polarization. This series of ceramics are promising not only for low temperature co-fired ceramic (LTCC) technology but also as substrates for physically and electrically small dielectrically loaded micro-strip patch antennas.