Thermoelectric Properties of Bi-based Zintl Compounds Ca1−xYbxMg2Bi2

Jing Shuai,Zihang Liu,Hee Seok Kim,Yumei Wang,Jun Mao,Ran He,Jiehe Sui,Zhifeng Ren

DOI: https://doi.org/10.1039/c6ta00507a

IF: 11.9

2016-01-01

Journal of Materials Chemistry A

Abstract:Bi-based Zintl compounds, Ca1−xYbxMg2Bi2 with the structure of CaAl2Si2, have been successfully prepared by mechanical alloying followed by hot pressing.

What problem does this paper attempt to address?

Thermoelectric Properties of Zintl Compound Ca1−xNaxMg2Bi1.98

Jing Shuai,Hee Seok Kim,Zihang Liu,Ran He,Jiehe Sui,Zhifeng Ren

DOI: https://doi.org/10.1063/1.4948651

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Motivated by good thermoelectric performance of Bi-based Zintl compounds Ca1−xYbxMg2Biy, we further studied the thermoelectric properties of Zintl compound CaMg2Bi1.98 by doping Na into Ca as Ca1−xNaxMg2Bi1.98 via mechanical alloying and hot pressing. We found that the electrical conductivity, Seebeck coefficient, power factor, and carrier concentration can be effectively adjusted by tuning the Na concentration. Transport measurement and calculations revealed that an optimal doping of 0.5 at. % Na achieved better average ZT and efficiency. The enhancement in thermoelectric performance is attributed to the increased carrier concentration and power factor. The low cost and nontoxicity of Ca1−xNaxMg2Bi1.98 makes it a potentially promising thermoelectric material for power generation in the mid-temperature range.
Zintl Phase Yb1–xBaxMg2Bi1.98 Compounds with Enhanced Thermoelectric Performance Caused by Cation Substitution

Jing Wang,Fengkai Guo,Muchun Guo,Jianbo Zhu,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1021/acsaem.0c02019

IF: 6.4

2020-01-01

ACS Applied Energy Materials

Abstract:Contributing to the unique structural and chemical characteristics, AM(2)X(2) Zintl compounds with the CaAl2Si2-type structure present advanced thermoelectric properties. In the present work, for YbMg2Bi2 compounds, the impact of Ba substitution on the Yb site is investigated. Owing to the changed electronegativity, the addition of Ba gives rise to the decline of carrier concentration and then induces the depressed power factor. However, fortunately, phonon scattering is dramatically intensified at the same time, which could be attributed to the obvious mass and strain fluctuation that originated from a visibly different mass/size between the Yb and Ba atoms. Typically, the lattice thermal conductivity of Yb0.75Ba0.2.5Mg2Bi1.98 achieves 1.21 W m(-1) K(-1)with a decrease of 46% compared to that of pristine YbMg2Bi1.98 at room temperature. Ultimately, for nontoxic Yb-0.75 Ba0.23Mg2Bi1.98, a significantly improved ZT value of similar to 1.04 at 823 K is achieved. More importantly, the ZT(eng) value noticeably increases to similar to 0.64 when T-h = 873 K and T-c = 300 K, with an enhancement of similar to 46% compared with the initial one. Meanwhile, the characteristic of nontoxicity would also enhance the possibility of YbMg2Bi2 to realize practical application.
Enhanced Thermoelectric Performance in SmMg2Bi2 via Ca-Alloying and Ge-Doping

Yufeng Huo,Shijuan Xiao,Lu Dai,Yuling Huang,Sikang Zheng,Zhiran Wang,Peng Chen,Guang Han,Xu Lu,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1021/acsaem.2c00529

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:Zintl phase compounds with a CaAl2Si2 structure are promising thermoelectric materials. In this paper, enhanced thermoelectric performance was achieved in SmMg2Bi2, a new member of AB2X2 compounds, via Ca-alloying and Ge-doping. The introduction of point defects by alloying Ca on the Sm site significantly reduces the lattice thermal conductivity, and the lowest value was achieved when the Sm/Ca molar ratio is 1:1. Doping Ge on the Bi site increases the hole concentration of the material, which successfully suppresses the bipolar effect and significantly improves the power factor (PF) in the whole temperature range. Due to the decrease of thermal conductivity and the increase of PF over 323–873 K, the peak zT value of Sm0.5Ca0.5Mg2.15Bi1.99Ge0.01 reached 0.71 at 873 K and the zTave approached 0.44, about 51 and 47% enhancement compared with the pristine sample, respectively. This work provides a thermoelectric performance optimization strategy that can be used for other AB2X2 compounds.
Zintl Phase Yb 1– x Ba x Mg 2 Bi 1.98 Compounds with Enhanced Thermoelectric Performance Caused by Cation Substitution

Jing Wang,Fengkai Guo,Muchun Guo,Jianbo Zhu,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1021/acsaem.0c02019

IF: 6.4

2020-10-29

ACS Applied Energy Materials

Abstract:Contributing to the unique structural and chemical characteristics, AM2X2 Zintl compounds with the CaAl2Si2-type structure present advanced thermoelectric properties. In the present work, for YbMg2Bi2 compounds, the impact of Ba substitution on the Yb site is investigated. Owing to the changed electronegativity, the addition of Ba gives rise to the decline of carrier concentration and then induces the depressed power factor. However, fortunately, phonon scattering is dramatically intensified at the same time, which could be attributed to the obvious mass and strain fluctuation that originated from a visibly different mass/size between the Yb and Ba atoms. Typically, the lattice thermal conductivity of Yb0.75Ba0.25Mg2Bi1.98 achieves 1.21 W m–1 K–1 with a decrease of 46% compared to that of pristine YbMg2Bi1.98 at room temperature. Ultimately, for nontoxic Yb0.75Ba0.25Mg2Bi1.98, a significantly improved ZT value of ∼1.04 at 823 K is achieved. More importantly, the ZTeng value noticeably increases to ∼0.64 when Th = 873 K and Tc = 300 K, with an enhancement of ∼46% compared with the initial one. Meanwhile, the characteristic of nontoxicity would also enhance the possibility of YbMg2Bi2 to realize practical application.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric Properties of Zintl Phase YbMg2Bi1.98 Through Bi Site Substitution with Sb

Jing Wang,Muchun Guo,Jianbo Zhu,Dandan Qin,Fengkai Guo,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.jmst.2020.04.052

2020-01-01

Abstract:Benefiting from the unique “Phonon-Glass, Electron-Crystal” (PGEC) characteristic, Zintl phases have been considered as a kind of promising thermoelectric materials. For the typical AM2X2 compounds with the CaAl2Si2-type structure, YbMg2Bi2 has shown competitive thermoelectric performance recently. Nevertheless, the optimization of YbMg2Bi2 compounds is primarily focused on the substitution on Yb or Mg site. Herein, the Bi site is substituted by isoelectric Sb and the effect on the thermoelectric transport behavior is investigated. The partial substitution reduces the carrier concentration and induces the lattice deformation caused by the different atomic radius and mass between Bi and Sb, further leading to the decreased power factor and thermal conductivity. Fortunately, the reduction extent of the thermal conductivity outperforms that of power factor. Finally, the Sb substitution successfully results in a better thermoelectric performance compared with that of the pristine YbMg2Bi1.98. Especially, the calculated energy conversion efficiency (η) of YbMg2Bi1.88Sb0.1 which also possesses a relatively high output power density reaches the maximum value of 9.8 % when Th = 873 K, and Tc = 300 K, respectively. This work demonstrates that the idea of substitution on anionic site should be a new strategy to achieve better ZT values for AM2X2 compounds.
Enhancement of Thermoelectric Performance of Phase Pure Zintl Compounds Ca1−xYbxZn2Sb2, Ca1−xEuxZn2Sb2, and Eu1−xYbxZn2Sb2 by Mechanical Alloying and Hot Pressing

Jing Shuai,Yumei Wang,Zihang Liu,Hee Seok Kim,Jun Mao,Jiehe Sui,Zhifeng Ren

DOI: https://doi.org/10.1016/j.nanoen.2016.04.023

IF: 17.6

2016-01-01

Nano Energy

Abstract:It has been previously shown that Zintl compounds Ca1−xYbxZn2Sb2 and EuZn2Sb2 could be good candidates as thermoelectric materials. However, the conventional synthesis process via melting-solidification-annealing introduces impurities and vacancies, resulting in abnormal high carrier concentration and ultimately low thermoelectric properties. Here we report the enhanced thermoelectric performance of Ca1−xYbxZn2Sb2 (x=0, 0.25, 0.5, 0.75, and 1) prepared by ball milling and hot pressing. XRD confirms the samples are pure Zintl phase within its limit. Other compounds EuZn2Sb2, Eu0.5Yb0.5Zn2Sb2, and Eu0.5Ca0.5Zn2Sb2 are also prepared by ball milling and hot pressing to further understand them. The observed changes in effective mass appear to be one of the reasons for the big difference of carrier mobility in Ca and rare earth (Yb, Eu) alloyed compounds. The defects caused by alloying are the dominant phonon scattering source in these materials. The highest figure of merit of ~0.9 is achieved in Ca0.25Yb0.75Zn2Sb2, ~50% higher than the best reported ZT in similar materials prepared by melting-solidification-annealing method.
Enhanced Thermoelectric Performance in SmMg2Bi2 Via Ca-Alloying and Ge-Doping

Yufeng Huo,Shijuan Xiao,Lu Dai,Yuling Huang,Sikang Zheng,Zhiran Wang,Peng Chen,Guang Han,Xu Lu,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1021/acsaem.2c00529

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:Zintl phase compounds with a CaAl2Si2 structure are promising thermoelectric materials. In this paper, enhanced thermoelectric performance was achieved in SmMg2Bi2, a new member of AB2X2 compounds, via Ca-alloying and Ge-doping. The introduction of point defects by alloying Ca on the Sm site significantly reduces the lattice thermal conductivity, and the lowest value was achieved when the Sm/Ca molar ratio is 1:1. Doping Ge on the Bi site increases the hole concentration of the material, which successfully suppresses the bipolar effect and significantly improves the power factor (PF) in the whole temperature range. Due to the decrease of thermal conductivity and the increase of PF over 323-873 K, the peak zT value of Sm0.5Ca0.5Mg2.15Bi1.99Ge0.01 reached 0.71 at 873 K and the zTave approached 0.44, about 51 and 47% enhancement compared with the pristine sample, respectively. This work provides a thermoelectric performance optimization strategy that can be used for other AB2X2 compounds.
Thermoelectric Properties of Zn-Doped YbMg1.85−xZnxBi1.98

Simin Wei,Nailing Qin,Guiying Wu,Zhengbing Xu,Lei Miao,Xiyong Chen,Jialin Yan

DOI: https://doi.org/10.3390/ma17050973

IF: 3.4

2024-02-20

Materials

Abstract:Bi-based YbMg2Bi1.98 Zintl compounds represent promising thermoelectric materials. Precise composition and appropriate doping are of great importance for this complex semiconductor. Here, the influence of Zn substitution for Mg on the microstructure and thermoelectric properties of p-type YbMg1.85−xZnxBi1.98 (x = 0, 0.05, 0.08, 0.13, 0.23) was investigated. Polycrystalline samples were prepared using induction melting and densified with spark plasma sintering. X-ray diffraction confirmed that the major phase of the samples possesses the trigonal CaAl2Si2-type crystal structure, and SEM/EDS indicated the presence of minor secondary phases. The electrical conductivity increases and the lattice thermal conductivity decreases with more Zn doping in YbMg1.85−xZnxBi1.98, whereas the Seebeck coefficient has a large reduction. The band gap decreases with increasing Zn concentration and leads to bipolar conduction, resulting in an increase in the thermal conductivity at higher temperatures. Figure of merit ZT values of 0.51 and 0.49 were found for the samples with x = 0 and 0.05 at 773 K, respectively. The maximum amount of Zn doping is suggested to be less than x = 0.1.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Enhanced Thermoelectric Performance in SmMg 2 Bi 2 via Ca-Alloying and Ge-Doping

Yufeng Huo,Shijuan Xiao,Lu Dai,Yuling Huang,Sikang Zheng,Zhiran Wang,Peng Chen,Guang Han,Xu Lu,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1021/acsaem.2c00529

IF: 6.4

2022-03-30

ACS Applied Energy Materials

Abstract:Zintl phase compounds with a CaAl2Si2 structure are promising thermoelectric materials. In this paper, enhanced thermoelectric performance was achieved in SmMg2Bi2, a new member of AB2X2 compounds, via Ca-alloying and Ge-doping. The introduction of point defects by alloying Ca on the Sm site significantly reduces the lattice thermal conductivity, and the lowest value was achieved when the Sm/Ca molar ratio is 1:1. Doping Ge on the Bi site increases the hole concentration of the material, which successfully suppresses the bipolar effect and significantly improves the power factor (PF) in the whole temperature range. Due to the decrease of thermal conductivity and the increase of PF over 323–873 K, the peak zT value of Sm0.5Ca0.5Mg2.15Bi1.99Ge0.01 reached 0.71 at 873 K and the zTave approached 0.44, about 51 and 47% enhancement compared with the pristine sample, respectively. This work provides a thermoelectric performance optimization strategy that can be used for other AB2X2 compounds.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Higher Thermoelectric Performance of Zintl Phases (eu 0.5 Yb 0.5 ) 1−x Ca X Mg 2 Bi 2 by Band Engineering and Strain Fluctuation

Jing Shuai,Huiyuan Geng,Yucheng Lan,Zhuan Zhu,Chao Wang,Zihang Liu,Jiming Bao,Ching-Wu Chu,Jiehe Sui,Zhifeng Ren

DOI: https://doi.org/10.1073/pnas.1608794113

IF: 11.1

2016-01-01

Proceedings of the National Academy of Sciences

Abstract:Significance The search for high-efficiency thermoelectric materials encompasses many classes of semiconductors. Zintl phases are attractive thermoelectric materials for thermoelectric applications. Here, we report the high thermoelectric performance of the rarely studied bismuth (Bi)-based Zintl phases (Eu 0.5 Yb 0.5 ) 1−x Ca x Mg 2 Bi 2 with the record figure-of-merit ZT as high as 1.3 at 873 K. This ZT value is, to our knowledge, the highest ever reported in CaAl 2 Si 2 -based structures, especially compared with the best antimony (Sb)-based YbZn 0.4 Cd 1.6 Sb 2 compound. Because Sb-based Zintl compounds have been studied for many decades, this Bi-based Zintl phase with high thermoelectric properties could be a good thermoelectric material candidate in the future.
Enhancement of Thermoelectric Performance of YbMg2Bi2-based Materials by Alloying and Doping with Suppressed Bipolar Effect

Ting Zhou,Jing Jiang,Chao Wang

DOI: https://doi.org/10.1088/1755-1315/467/1/012023

2020-01-01

Abstract:Here we report the enhanced thermoelectric performances of the YbMg2Bi2-based compounds. The formation of Yb0.8-xCaxMg0.2Mg2Bi1.96 (x = 0, 0.2, 0.4, and 0.6) solid solutions effectively decreases the thermal conductivity. Besides, the bandgap of the compounds is widened due to the larger bandgap of CaMg2Bi2 than YbMg2Bi2. Further doping Sn into the Bi site suppresses the bipolar effect and enhances the electrical conductivity at higher temperature by increasing the carrier concentration. And the lattice thermal conductivity is reduced due to the intensified point defects scattering. Benefiting from these results, a higher maximum ZT for Yb0.4Ca0.4Mg0.2Mg2Bi1.95Sn0.01 is achieved. Our work sheds lights on enhancing the thermoelectric performance by suppressing the bipolar conduction and improving the power factor through widening the bandgap accompany by increasing the carrier concentration, and demonstrates that YbMg2Bi2-based Zintls are promising candidates for thermoelectric materials.
Plastically Mg3(Sb,Bi)2-based thermoelectric compounds with enhanced texture via cold-deformation

Ziming Zhang,Zhiqiang Gao,Tingting Deng,Qingfeng Song,Lidong Chen,Shengqiang Bai

DOI: https://doi.org/10.1039/d4ta00161c

IF: 11.9

2024-02-27

Journal of Materials Chemistry A

Abstract:Mg3(Sb,Bi)2-based Zintl compounds have attracted lots of attention due to its high thermoelectric performance and good mechanical property. However, thermally activated mobility, which is ascribed to the grain boundary scattering, greatly limits its practically use. In this work, we reveal the plasticity of Mg3(Sb,Bi)2-based compounds in the compressive strength test. The ab-initio analysis indicates that this plasticity should be ascribed to the low slip barrier energy (~ 580 mJ/m2), which is only one third of the cleavage energy (~ 1600 mJ/m2). Based on this finding, we propose a cold-deformation procedure to elongate particles and to enhance texture, which successfully supress the grain boundary scattering. As a result, a high carrier mobility of 86.6 cm2 V-1 s-1 and a high power factor of 16.2 μW cm-1 K-2 in Mg3.1Bi1.5Sb0.49Te0.01 was obtained at room temperature. The plastic deformation capacity of Mg3(Sb,Bi)2 compounds provide a near-net-forming method to fabricate profiled devices at room-temperature, which will extend the application fields of thermoelectric techniques.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Zintl Phase Compounds Mg3Sb2−x Bi X (x = 0, 1, and 2) Monolayers: Electronic, Phonon and Thermoelectric Properties from Ab Initio Calculations

Zheng Chang,Jing Ma,Kunpeng Yuan,Jiongzhi Zheng,Bin Wei,Mohammed Al-Fahdi,Yufei Gao,Xiaoliang Zhang,Hezhu Shao,Ming Hu,Dawei Tang

DOI: https://doi.org/10.3389/fmech.2022.876655

2022-01-01

Frontiers in Mechanical Engineering

Abstract:The Mg3Sb2−x Bi x family has emerged as the potential candidates for thermoelectric applications due to their ultra-low lattice thermal conductivity ( κ L ) at room temperature (RT) and structural complexity. Here, using ab initio calculations of the electron-phonon averaged (EPA) approximation coupled with Boltzmann transport equation (BTE), we have studied electronic, phonon and thermoelectric properties of Mg3Sb2−x Bi x (x = 0, 1, and 2) monolayers. In violation of common mass-trend expectations, increasing Bi element content with heavier Zintl phase compounds yields an abnormal change in κ L in two-dimensional Mg3Sb2−x Bi x crystals at RT (∼0.51, 1.86, and 0.25 W/mK for Mg3Sb2, Mg3SbBi, and Mg3Bi2). The κ L trend was detailedly analyzed via the phonon heat capacity, group velocity and lifetime parameters. Based on quantitative electronic band structures, the electronic bonding through the crystal orbital Hamilton population (COHP) and electron local function analysis we reveal the underlying mechanism for the semiconductor-semimetallic transition of Mg3Sb2-−x Bi x compounds, and these electronic transport properties (Seebeck coefficient, electrical conductivity, and electronic thermal conductivity) were calculated. We demonstrate that the highest dimensionless figure of merit ZT of Mg3Sb2−x Bi x compounds with increasing Bi content can reach ∼1.6, 0.2, and 0.6 at 700 K, respectively. Our results can indicate that replacing heavier anion element in Zintl phase Mg3Sb2−x Bi x materials go beyond common expectations (a heavier atom always lead to a lower κ L from Slack’s theory), which provide a novel insight for regulating thermoelectric performance without restricting conventional heavy atomic mass approach.
Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang

DOI: https://doi.org/10.1103/PhysRevB.85.035202

2012-01-12

Abstract:The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2 were characterized between 2 and 650K. As synthesized, the polycrystalline samples are found to have lower p-type carrier concentrations than single-crystalline samples of the same empirical formula. These low carrier concentration samples possess the highest mobilities yet reported for materials with the CaAl2Si2 structure type, with a mobility of ~740cm$^2$/V/s observed in EuMg2Bi2 at 50K. Despite decreases in the Seebeck coefficient (\alpha) and electrical resistivity (\rho) with increasing temperature, the power factor (\alpha^2/\rho) increases for all temperatures examined. This behavior suggests a strong asymmetry in the conduction of electrons and holes. The highest figure of merit (zT) is observed in YbMg2Bi2, with zT approaching 0.4 at 600K for two samples with carrier densities of approximately 2x10^{18}cm^{-3} and 8x10^{18}cm^{-3} at room temperature. Refinements of neutron powder diffraction data yield similar behavior for the structures of CaMg2Bi2 and YbMg2Bi2, with smooth lattice expansion and relative expansion in $c$ being ~35% larger than relative expansion in $a$ at 973K. First principles calculations reveal an increasing band gap as Bi is replaced by Sb then As, and subsequent Boltzmann transport calculations predict an increase in \alpha for a given $n$ associated with an increased effective mass as the gap opens. The magnitude and temperature dependence of \alpha suggests higher zT is likely to be achieved at larger carrier concentrations, roughly an order of magnitude higher than those in the current polycrystalline samples, which is also expected from the detailed calculations.

Materials Science,Other Condensed Matter
Thermoelectric Performance of Zintl Compound KMgBi with Layered Structure

Aixian She,Yinchang Zhao,Jun Ni,Sheng Meng,Zhenhong Dai

DOI: https://doi.org/10.1016/j.jpcs.2023.111308

IF: 4.383

2023-01-01

Journal of Physics and Chemistry of Solids

Abstract:Zintl compounds are potential candidates for thermoelectric (TE) materials because of their excellent electronic transport combined with low thermal conductivity. We have systematically investigated the thermal, electronic transport, and TE properties of the anisotropic orthorhombic KMgBi crystal on the basis of first-principles calculations together with self-consistent phonon theory, the compressed sensing technique, and the Boltzmann transport equation. When predicting electron transport parameters, we take into account the impacts of acoustic deformation potential scattering, polar optical phonon scattering, and ionized impurity scattering on electron relaxation times. Strikingly, the layered structure of the Zintl compound KMgBi results in the material exhibiting strong anisotropy. This layered structure provides a good transport channel for electrons along the a(b)-axis, which results in a large difference in electrical conductivity and thermal conductivities between the a(b)-axis and the c-axis. Because of the high power factor obtained along the a(b)-axis, the figure of merit (ZT) is expected to reach 1.5 at 600 K and KMgBi is a promising candidate for high-temperature TE applications.
Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg 2 Bi 2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity

Muchun Guo,Fengkai Guo,Jianbo Zhu,Li Yin,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2020/5016564

IF: 11

2020-07-24

Research

Abstract:CaMg 2 Bi 2 -based compounds, a kind of the representative compounds of Zintl phases, have uniquely inherent layered structure and hence are considered to be potential thermoelectric materials. Generally, alloying is a traditional and effective way to reduce the lattice thermal conductivity through the mass and strain field fluctuation between host and guest atoms. The cation sites have very few contributions to the band structure around the fermi level; thus, cation substitution may have negligible influence on the electric transport properties. What is more, widespread application of thermoelectric materials not only desires high Z T value but also calls for low-cost and environmentally benign constituent elements. Here, Ba substitution on cation site achieves a sharp reduction in lattice thermal conductivity through enhanced point defects scattering without the obvious sacrifice of high carrier mobility, and thus improves thermoelectric properties. Then, by combining further enhanced phonon scattering caused by isoelectronic substitution of Zn on the Mg site, an extraordinarily low lattice thermal conductivity of 0.51 W m -1 K -1 at 873 K is achieved in (Ca 0.75 Ba 0.25 ) 0.995 Na 0.005 Mg 1.95 Zn 0.05 Bi 1.98 alloy, approaching the amorphous limit. Such maintenance of high mobility and realization of ultralow lattice thermal conductivity synergistically result in broadly improvement of the quality factor β . Finally, a maximum Z T of 1.25 at 873 K and the corresponding Z T a v e up to 0.85 from 300 K to 873 K have been obtained for the same composition, meanwhile possessing temperature independent compatibility factor. To our knowledge, the current Z T a v e exceeds all the reported values in AMg 2 Bi 2 -based compounds so far. Furthermore, the low-cost and environment-friendly characteristic plus excellent thermoelectric performance also make the present Zintl phase CaMg 2 Bi 2 more competitive in practical application.

multidisciplinary sciences
Thermoelectric Performance of Mg2-Xcaxsi Compounds

Q. Zhang,X. B. Zhao,H. Yin,T. J. Zhu

DOI: https://doi.org/10.1016/j.jallcom.2007.09.101

IF: 6.2

2008-01-01

Journal of Alloys and Compounds

Abstract:Thermoelectric materials Mg2-xCaxSi (x = 0, 0.01, 0.03, 0.05 0.07, 0.1) compounds have been prepared by vacuum melting followed by hot-pressing. Effects of the substitution of Ca for Mg on phase structures and the thermoelectric properties of the hot-pressed compounds were investigated. It was found that the alloying of Ca in Mg2Si based compounds increases the electrical conductivity and decreases the Seebeck coefficient of the compounds, due to the electronegativity difference between Ca and Mg. The dimensionless figures of merit of Mg2Si and Mg1.99Ca0.01 Si reach, respectively, 0.41 and 0.34 at 660 K. (C) 2007 Elsevier B.V. All rights reserved.
Thermoelectric Transport Properties of CaMg2Bi2, EuMg2Bi

Andrew F. May,Michael A. McGuire,David J. Singh,Jie Ma,Olivier Delaire,Ashfia Huq,Wei Cai,Hsin Wang

DOI: https://doi.org/10.1103/physrevb.85.035202

IF: 3.7

2012-01-01

Physical Review B

Abstract:The thermoelectric transport properties of CaMg${}_{2}$Bi${}_{2}$, EuMg${}_{2}$Bi${}_{2}$, and YbMg${}_{2}$Bi${}_{2}$ were characterized between 2 and 650 K. As synthesized, the polycrystalline samples are found to have lower $p$-type carrier concentrations than single-crystalline samples of the same empirical formula. These low carrier concentration samples possess the highest mobilities yet reported for materials with the CaAl${}_{2}$Si${}_{2}$ structure type, with a mobility of $\ensuremath{\sim}$740 cm${}^{2}$/V/s observed in EuMg${}_{2}$Bi${}_{2}$ at 50 K. Despite decreases in the Seebeck coefficient ($\ensuremath{\alpha}$) and electrical resistivity ($\ensuremath{\rho}$) with increasing temperature, the power factor (${\ensuremath{\alpha}}^{2}\ensuremath{\rho}$) increases for all temperatures examined. This behavior suggests a strong asymmetry in the conduction of electrons and holes. The highest figure of merit ($zT$) is observed in YbMg${}_{2}$Bi${}_{2}$, with $zT$ approaching 0.4 at 600 K for two samples with carrier densities of approximately $2\ifmmode\times\else\texttimes\fi{}{10}^{18}$ cm${}^{\ensuremath{-}3}$ and $8\ifmmode\times\else\texttimes\fi{}{10}^{18}$ cm${}^{\ensuremath{-}3}$ at room temperature. Refinements of neutron powder diffraction data yield similar behavior for the structures of CaMg${}_{2}$Bi${}_{2}$ and YbMg${}_{2}$Bi${}_{2}$, with smooth lattice expansion and relative expansion in $c$ being $\ensuremath{\sim}$35$%$ larger than relative expansion in $a$ at 973 K. First-principles calculations reveal an increasing band gap as Bi is replaced by Sb and then As, and subsequent Boltzmann transport calculations predict an increase in $\ensuremath{\alpha}$ for a given $n$ associated with an increased effective mass as the gap opens. The magnitude and temperature dependence of $\ensuremath{\alpha}$ suggests higher $zT$ is likely to be achieved at larger carrier concentrations, roughly an order of magnitude higher than those in the current polycrystalline samples, which is also expected from the detailed calculations.
Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

Hyunyong Cho,Song Yi Back,Naoki Sato,Zihang Liu,Weihong Gao,Longquan Wang,Hieu Duy Nguyen,Naoyuki Kawamoto,Takao Mori

DOI: https://doi.org/10.1002/adfm.202407017

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Thermoelectric cooling materials based on Bi2Te3 have a long history of unsurpassed performance near room temperature. Recently, research into price-competitive Mg-3(Bi, Sb)(2)-based materials are focused on replacing traditional cooling materials. Here, the thermoelectric properties of Mg(3.2)Bi(1.998-x)SbxTe(0.002)Cu(0.005) (x = 0.0, 0.1, 0.2, 0.3, 0.4, and 0.5) polycrystalline compounds are investigated. In all temperature regions, electrical resistivity and Seebeck coefficient are increased with Sb concentration. The electronic transport properties of Sb-alloyed compounds are maximized by synergistically combined band engineering approaches such as band structure change caused by lattice strain, increased electronic density of states, and chemical potential shift, leading to exceptionally high-power factor values of over 3.0 mW m(-1) K-2 at room temperature. Furthermore, with increasing Sb content, thermal conductivity values are systematically reduced due to the promotion of alloy scattering of phonons and suppression of the bipolar contribution. Consequently, these multiple approaches significantly enhance thermoelectric performance, resulting in an enhancement of thermoelectric figure-of-merit zT above 1.1 at 348-423 K. Additionally, a zT(avg) of 1.1 is recorded at 300-450 K, making it an unrivaled value among the reported n-type Mg3Bi2-based thermoelectric materials. Overall, this work demonstrates that Mg3Bi2-based materials are more promising for thermoelectric cooling applications compared to Bi2Te3-based materials.
High Thermoelectric Performance of CaMg2Bi2 Enabled by Dynamic Doping and Orbital Alignment

Muchun Guo,Wenya Zhai,Jingyu Li,Jianbo Zhu,Fengkai Guo,Zihang Liu,Ming Liu,Yuke Zhu,Xingyan Dong,Yongsheng Zhang,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1002/adfm.202200407

IF: 19

2022-01-01

Advanced Functional Materials

Abstract:Substantial progress in improving the thermoelectric performance of CaMg2Bi2‐based materials has been made, yet existing reports barely discuss the effect of intrinsic Bi impurity on the transport properties. In this study, the first‐principles calculation shows that the Bi‐rich environment associated with Bi impurities facilitates the reduction of cation vacancy formation energy and then increases the carrier concentration. In addition, in the samples containing Bi impurity, a dynamic doping behavior caused by the redissolving of Bi second phase into the matrix with increasing temperature is identified experimentally, which force the carrier concentration to approach the optimal carrier concentration nH,opt, leading to a more than a 5 times enhancement of the figure‐of‐merit (ZT) compared to the single‐phase CaMg2Bi1.94. Moreover, by doping Ba and Yb on the Ca Site, orbital alignment is realized and phonon scattering is also enhanced. The synergistical optimization of electrical and thermal transportation brings a peak ZT of 1.24 at 873 K and a record ZTave of 0.86 (300–873 K) in (Ca0.5Yb0.25Ba0.25)0.995Na0.005Mg2Bi1.98 sample.

Thermoelectric Properties of Bi-based Zintl Compounds Ca1−xYbxMg2Bi2

Thermoelectric Properties of Zintl Compound Ca1−xNaxMg2Bi1.98

Zintl Phase Yb1–xBaxMg2Bi1.98 Compounds with Enhanced Thermoelectric Performance Caused by Cation Substitution

Enhanced Thermoelectric Performance in SmMg<sub>2</sub>Bi<sub>2</sub> via Ca-Alloying and Ge-Doping

Zintl Phase Yb 1– x Ba x Mg 2 Bi 1.98 Compounds with Enhanced Thermoelectric Performance Caused by Cation Substitution

Enhanced Thermoelectric Properties of Zintl Phase YbMg2Bi1.98 Through Bi Site Substitution with Sb

Enhancement of Thermoelectric Performance of Phase Pure Zintl Compounds Ca1−xYbxZn2Sb2, Ca1−xEuxZn2Sb2, and Eu1−xYbxZn2Sb2 by Mechanical Alloying and Hot Pressing

Enhanced Thermoelectric Performance in SmMg2Bi2 Via Ca-Alloying and Ge-Doping

Thermoelectric Properties of Zn-Doped YbMg1.85−xZnxBi1.98

Enhanced Thermoelectric Performance in SmMg 2 Bi 2 via Ca-Alloying and Ge-Doping

Higher Thermoelectric Performance of Zintl Phases (eu 0.5 Yb 0.5 ) 1−x Ca X Mg 2 Bi 2 by Band Engineering and Strain Fluctuation

Enhancement of Thermoelectric Performance of YbMg2Bi2-based Materials by Alloying and Doping with Suppressed Bipolar Effect

Plastically Mg3(Sb,Bi)2-based thermoelectric compounds with enhanced texture via cold-deformation

Zintl Phase Compounds Mg3Sb2−x Bi X (x = 0, 1, and 2) Monolayers: Electronic, Phonon and Thermoelectric Properties from Ab Initio Calculations

Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

Thermoelectric Performance of Zintl Compound KMgBi with Layered Structure

Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg 2 Bi 2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity

Thermoelectric Performance of Mg2-Xcaxsi Compounds

Thermoelectric Transport Properties of CaMg2Bi2, EuMg2Bi

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

High Thermoelectric Performance of CaMg2Bi2 Enabled by Dynamic Doping and Orbital Alignment