High‐Mobility N‐Type Organic Field‐Effect Transistors of Rylene Compounds Fabricated by a Trace‐Spin‐Coating Technique

Guangyao Zhao,Pengcheng Gu,Huanli Dong,Wei Jiang,Zhaohui Wang,Wenping Hu
DOI: https://doi.org/10.1002/aelm.201500430
IF: 6.2
2016-01-01
Advanced Electronic Materials
Abstract:G. Zhao, P. Gu, Prof. H. Dong, Prof. W. Jiang, Prof. Z. Wang, Prof. W. Hu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 , P. R. China E-mail: dhl522@iccas.ac.cn; wangzhaohui@iccas.ac.cn; huwp@iccas.ac.cn; G. Zhao Graduate University of Chinese Academy of Sciences Beijing 100049 , P. R. China P. Gu, Prof. H. Dong Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing 100037 , China Prof. W. Hu Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 , China
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