Homogenous In_xGa_1-xN Alloys on ZnO Substrates: A New Approach for High Performance Thermoelectric Materials

Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu

2019-01-01

Abstract:High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous In_0.32Ga_0.68N on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of 0.86, which is five times larger than that of SiGe, the current state of the art high temperature thermoelectric material. These materials are shown to have a nearly perfect doping concentration to maximize zT regardless of the scattering mechanism. This almost one order of magnitude increase in zT is due to large electrical conductivities from oxygen co-doping as well as low thermal conductivities from alloy scattering. The maximum power factor reached was 77.98x10^-4 W/mK^2 at 300K for In_0.32Ga_0.68N alloys at a carrier concentration 6.25x10^20 cm^-3. This work indicates that In_xGa_1-xN alloys have great potential for thermoelectric applications especially at a high temperature range.