Growth Control of InP/ZnSe Heterostructured Nanocrystals
Doyoon Shin,Hak June Lee,Dongju Jung,Jong Ah Chae,Jeong Woo Park,Jaemin Lim,Seongbin Im,Sejong Min,Euyheon Hwang,Doh C. Lee,Young‐Shin Park,Jun Hyuk Chang,Kyoungwon Park,Junki Kim,Ji‐Sang Park,Wan Ki Bae
DOI: https://doi.org/10.1002/adma.202312250
IF: 29.4
2024-02-03
Advanced Materials
Abstract:The morphology of heterostructured semiconductor nanocrystals (h‐NCs) dictates spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h‐NCs. The inability to control the morphology of heterovalent III‐V/II‐VI h‐NCs composed of heavy‐metal‐free elements hinders their practical use. As a case study of III‐V/II‐VI h‐NCs, we demonstrate here the growth control of ZnSe epilayers on InP NCs. The anisotropic morphology in InP/ZnSe h‐NCs is attributed to the facet‐dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and we demonstrate effective chemical means for controlling the growth rates of ZnSe on different surface planes. Ultimately, we capitalize on the controlled morphology of InP/ZnSe h‐NCs to expand their photophysical characteristics from stable and pure emission to environment‐sensitive one, which will facilitate their use in a variety of photonic applications. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology