Abstract:This paper reports a facile chemical strategy for producing atomically thin PdSe2 nanosheets using electrochemical intercalation. The as‐exfoliated PdSe2 nanosheets undergo structural phase transition after thermal annealing to transform into metallic PdSe2‐x. Moreover, controllable phase transformation is demonstrated by van der Waals encapsulation, which leads to the formation of a metal‐semiconductor junction. This paper illustrates the potential of phase‐change materials in nanoelectronics. 2D orthorhombic palladium diselenide is attracting rapidly increased interest by virtue of its fascinating physical properties and feasibility of phase transformation. However, it remains a major challenge to produce ultrathin PdSe2 through a facile chemical route and control phase transformation because of its anisotropic structure with strong interlayer coupling. Here, the efficient synthesis of few‐layer PdSe2 nanosheets with large sizes using an electrochemical exfoliation approach is reported. Upon thermal annealing at 300–350 °C, the as‐exfoliated PdSe2 nanosheets transform into metallic phase PdSe2‐x, as verified by scanning transmission electron microscopy, Raman spectroscopy, and electrical characterizations. Simple encapsulation using hexagonal boron nitride (h‐BN) can effectively suppress the Se‐loss triggered phase transformation, so that a metal‐semiconductor junction is formed by local phase modification. The fabricated PdSe2 field‐effect transistors exhibit p‐type transport property, which is in stark contrast to electron‐dominated ambipolar transport of pristine PdSe2 devices. The combination of high‐resolution X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy analysis reveals that the modulation of carrier polarity in h‐BN encapsulated PdSe2 should arise from the p‐doping effect associated with the impact of interfacial condition. The study opens up a new route for future phase‐engineered electronics in PdSe2 and other 2D noble metal dichalcogenides materials.

Phase‐Tunable Synthesis of Ultrathin Layered Tetragonal CoSe and Nonlayered Hexagonal CoSe Nanoplates

Structural Phase Transition of Multilayer VSe2.

Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties

Controlled Synthesis of Ultrathin PtSe 2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties

Thickness-Controlled Synthesis of CoX2 (X = S, Se, and Te) Single Crystalline 2D Layers with Linear Magnetoresistance and High Conductivity

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

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Phase‐Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

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Two‐Dimensional CuSe Nanosheets with Microscale Lateral Size: Synthesis and Template‐Assisted Phase Transformation

Ultrathin FeTe nanosheets with tetragonal and hexagonal phases synthesized by chemical vapor deposition

Evolution of Electronic Structure and Electron-Phonon Coupling in Ultrathin Tetragonal CoSe Films

In‐plane Epitaxial Growth of 2D CoSe‐WSe2 Metal‐semiconductor Lateral Heterostructures with Improved WSe2 Transistors Performance

In-plane template induced selective growth of H-phase CrSe2

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

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Ultrathin Magnetic 2D Single‐Crystal CrSe

Half-metallic Ferromagnetism in Synthetic Co9Se8 Nanosheets with Atomic Thickness.

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Highly Selective Synthesis of Monolayer or Bilayer WSe2 Single Crystals by Pre-annealing the Solid Precursor