A Dual-Band High-Efficiency Power Amplifier in 65-Nm CMOS Technology
Yingyu Liu,Fei You,Siyu Zeng,Yingjie Liu,Xiaoling Zhang,Xubin Zhang,Bo Pang,Haiqian Tang,Yixuan Ding,Xinyi Zhang,Songbai He
DOI: https://doi.org/10.1109/icmmt61774.2024.10672077
2024-01-01
Abstract:In this paper, a dual-band high-efficiency power amplifier (PA) in 65-nm CMOS technology is designed. The coupler-capacitor network realizes frequency reconfiguration and power division at different ports with the change of frequency automatically in broadband. The powercell adopts a cascode structure to achieve high output power. The PA consists of coupler-capacitor networks, a high-band network and a low-band network. The high-band network consists of a driver stage and a power stage to enhance gain flatness and expand bandwidth. The simulated 3-dB bandwidth(BW) of low-band is 65% (5.5 GHz-10.8 GHz), and the high-band is 54%(15.5 GHz-27 GHz). The proposed PA demonstrates 19.5 dBm saturated output power $(\mathrm{P}_{\text{sat}})$ with a peak power-added efficiency (PAE) of 40% at 8 GHz and 16.8 $\text{dBm}\mathrm{P}_{\text{sat}}$ , 18.6% PAE at 21 GHz.