Abstract:Improvement in the in-filed transport properties of REBa2Cu3O7-delta (RE = rare earth elements, REBCO) coated conductor is needed to meet the performance requirements for various practical applications, which can be accomplished by introducing artificial pinning centers (APCs), such as second phase dopant. However, with increasing dopant level the critical current density J(c) at 77 K in zero applied magnetic field decreases. In this paper, in order to improve J(c) we propose a seed layer technique. 5 mol% BaHfO3 (BHO) doped Y0.5Gd0.5Ba2Cu3O7-delta (YGBCO) epilayer with an inserted seed layer was grown on CeO2 buffered ion beam assisted deposition MgO (IBAD-MgO) tape by pulsed laser deposition. The effect of the conditions employed to prepare the seed layer, including tape moving speed and chemical composition, on the quality of 5 mol% BHO doped YGBCO epilayer was systematically investigated by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM) observations. It was found that all the samples with seed layer have higher J(c) (77 K, self-field) than the 5 mol% BHO doped YGBCO film without seed layer. The seed layer could inhibit deterioration of the J(c) at 77 K and self-filed. Especially, the self-seed layer (5 mol% BHO doped YGBCO seed layer) was more effective in improving the crystal quality, surface morphology and superconducting performance. At 4.2 K, the 5 mol% BHO doped YGBCO film with 4 nm thick self-seed layer had a very high flux pinning force density F-p of 860 GN/m(3) for B//c under a 9 T field, and more importantly, the peak of the F-p curve was not observed. (C) 2018 Elsevier B. V. All rights reserved.

The Influence of Substrate Temperature of Seed Layer on the Structure and Superconducting Property of BaHfO 3 -Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7−δ Film Prepared by Pulsed Laser Deposition

Formation of Qualified BaHfO3 Doped Y0.5Gd0.5Ba2Cu3O7−δ Film on CeO2 Buffered IBAD-MgO Tape by Self-Seeding Pulsed Laser Deposition

In-field Performance Comparison and Vortex Pinning Analysis in Depth of Pristine and BaHfO 3 -Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7- Δ Films in Different Temperature Regions

Effect of the Seed Layer on the Y0.5Gd0.5Ba2Cu3O7-σ Film Fabricated by PLD

Effect and Mechanism of Doping Concentration on Growth and Performance of Thick BaHfO 3 -Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7− Δ Films by Pulsed Laser Deposition

Superconducting Properties and Microstructures of CeO2 Doped YBa2Cu3O7−δ Films Fabricated by Pulsed Laser Deposition

Microstructure and superconducting properties of (BaTiO3, Y2O3)-doped YBCO films under different firing temperatures

The Influence of Temperature Distribution on YBCO Coated Conductor Deposited by Reel-to-Reel PLD Method

Effect of Deposition Temperature on the Epitaxial Growth of YBCO Thin Films on RABiTS Substrates by Pulsed Laser Deposition Method

Enhanced superconducting properties and microstructures of Y0.5Gd0.5B2C3O7-δ/ LaGdZr2O7/ Y0.5Gd0.5Ba2Cu3O7-δ film

Effect of Hf Addition on Critical Current Density of (y,eu)ba 2 Cu 3.6 O 7-Δ Thin Films Prepared by Trifluoroacetate Metal Organic Deposition

Superheating Nature Coupled with Mg‐doping Effect of High Thermal Stable NdBa2Cu3O7‐δ Film

Enhanced Superconducting Properties and Microstructures of YGdBCO7-δ/ LaGdZrO/ YGdBaCuO7-δ Film

Temperature-Modulated Growth of MOCVD-Derived YBa2Cu3O7−x Films on IBAD-MgO Templates

Enhanced Superconducting Properties of a YGBCO/Gd-CeO2/YGBCO Tri-Layer Film Deposited by Pulsed Laser Deposition

Optimization of BaHfO 3 Doping Concentration as Secondary Phase in Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7− x Thin Film Prepared by Pulsed Laser Deposition

In-field Superconducting Critical Current of Y0.5Gd0.5Ba2Cu3O7-σ Films Obtained by a Multi-Step Deposition Process

Significantly Improving the Flux Pinning of YBa2Cu3O7‐δ Superconducting Coated Conductors via BaHfO3 Nanocrystal Addition Using Multistep Film Growth Method

Improvement of Superconducting Properties in YBa2Cu3O7-δ Liquid Phase Epitaxy Thick-Film by Ca Doping

Microstructure and Improved J C – H Characteristic of Sr 2 Nb 2 O 7 -Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7− X Thin Film Prepared by Pulsed Laser Deposition

Epitaxial Pb(Zr 0.52 Ti 0.48 ) O 3 /Y 1 Ba 2 Cu 3 O 7- X Heterostructure Prepared by Pulsed Laser Deposition