Effect and Mechanism of Doping Concentration on Growth and Performance of Thick BaHfO 3 -Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7− Δ Films by Pulsed Laser Deposition

Ye Jiachao,Mou Shaojing,Zhu Rongji,Liu Linfei,Li Yijie
DOI: https://doi.org/10.1007/s10948-021-06078-4
2022-01-01
Journal of Superconductivity and Novel Magnetism
Abstract:One mole percent and 3 mol% BaHfO3-doped Y0.5Gd0.5Ba2Cu3O7−δ films with thickness of micron level were prepared on CeO2 layer under different laser fluences respectively by pulsed laser deposition. Under a higher laser fluence, compared with 1 mol% BaHfO3-doped Y0.5Gd0.5Ba2Cu3O7−δ film, 3 mol% BaHfO3-doped Y0.5Gd0.5Ba2Cu3O7−δ film has lower self-field critical current density at 77 K, falling from 2.143 to 1.75 MA/cm2, although its surface is smoother. Under a lower laser fluence, both the thick films have poorer superconductivity and surface morphology, which has been explained by the appearance of a-axis-oriented grains and disordered particles on the surface caused by reduced diffusion energy. What is more, the superconductivity decays more as the BaHfO3 doping concentration increases. The strain field due to lattice mismatch will further reduce the diffusion energy of Y0.5Gd0.5Ba2Cu3O7−δ atoms, which will make it easier to form a-axis-oriented grain and degrade the film surface quality, thus aggravating the decrease of superconducting current.
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