Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Unconventional computing with diffusive memristors

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A novel true random number generator based on a stochastic diffusive memristor

Ultrathin SrTiO3-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware

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Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics

Volatile threshold switching and synaptic property controlled by Ag diffusion using Schottky defect

Unraveling the Roles of Switching and Relaxation Times in Volatile Electrochemical Memristors to Mimic Neuromorphic Dynamical Features

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing

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CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Self-doping memristors with equivalently synaptic ion dynamics for neuromorphic computing.