Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the linking boundaries. More importantly, we find that the atomically sharp zigzag-type boundaries dominate the patching interface between graphene and h-BN as demonstrated by atomic-scale STM images. To understand the physical origin of the atomic linking of the h-BN-G heterostructures, we also perform density functional theory (DFT) calculations, including geometry optimizations and binding energy calculations for different kinds of linking interfaces. The calculated results reconfirm that graphene prefers to grow on the h-BN domain edges and form zigzag linking boundaries. Besides the atomic structures on the linking interfaces, the electronic characteristics are also of particular importance. It is worth noting that the substrates coupled strongly with graphene by pi-d orbital hybridization (such as Rh(111) and Ru(0001)), lead to downward shift of graphene pi-bands away from the Fermi level, or decay of the intrinsic electronic structure of graphene. In this regard, the influence of h-BN on the electronic property of graphene is hard to identify on such h-BN-G heterostructures. The weakly coupled Ir(111) is chosen to be a perfect substrate to investigate the interface electronic properties of h-BN-G heterostructure due to the absence of substrate electronic doping effect. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the linking boundaries on Ir(111). Therefore, the present work offers a deep insight into the h-BN-G boundary structures and the effect of adlayer-substrate coupling both geometrically and electronically.

Tuning the Electronic and Optical Properties of Hexagonal Boron-Nitride Nanosheet by Inserting Graphene Quantum Dots

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Graphene quantum dots embedded in a hexagonal BN sheet: identical influences of zigzag/armchair edges.

BN-embedded monolayer graphene with tunable electronic and topological properties

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Density Functional Theory Study Of Bn-Doped Graphene Superlattice: Role Of Geometrical Shape And Size

BN-Embedded Graphene with a Ubiquitous Gap Opening

Tunable Electronic and Magnetic Properties of Graphene Flake-Doped Boron Nitride Nanotubes

Tuning of the Optical, Electronic, and Magnetic Properties of Boron Nitride Nanosheets with Oxygen Doping and Functionalization

Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges.

Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures

Sub-10 Nm Stable Graphene Quantum Dots Embedded in Hexagonal Boron Nitride.

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

Tuning the Band Gap and Magnetic Properties of BN Sheets Impregnated with Graphene Flakes

Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

Tuning electronic and optical properties of graphene/h-BN heterobilayer via surface modification

Impact of varying lateral interface ratio on the excitonic and spectral features of planar Graphene Quantum Dot/h-BN van der Waals heterostructures for optoelectronic applications: A Density Functional theory study

Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride