Thickness Dependence of Photoconductance in Strained BiFeO3 Thin Films with Planar Device Geometry (phys. Status Solidi RRL 1/2018)

Zhifeng Huang,Peilian Li,Zhen Fan,Hua Fan,Qiuyuan Luo,Chao Chen,Deyang Chen,Min Zeng,Minghui Qin,Zhang,Xubing Lu,Xingsen Gao,Jun‐Ming Liu
DOI: https://doi.org/10.1002/pssr.201870401
2018-01-01
Abstract:Photodetectors, which convert incident light into electricity, are the key components to many optoelectronic technologies in use today. How well the photodetectors perform depends on how efficiently the photo-excited electron–hole pairs are separated. Efficient charge separation was recently discovered in tetragonal–rhombohedral (T-R) polymorphic phase boundaries (PPBs) in strained BiFeO3 (BFO) films, which also raised the question of whether the PPBs could enhance the performance of BFO-based planar photodetectors. In their Letter (article no. 1700301), Zhen Fan, Xingsen Gao and co-workers systematically investigate the photoconductive characteristics of strained BFO films with different thicknesses, in which the BFO evolves from a pure T phase (without PPBs) to a T-R mixed phase (with PPBs), by using the planar device geometry. Interestingly, the 50-nm film containing the pure T phase without any detectable PPBs exhibits the highest photoconductance. To understand this unexpected observation, the authors analyze the effects of increasing film thickness and associated phase evolution on the photoconduction process, with particular attention paid to the role of PPBs. This study provides insights into the physics of photoconduction in the BFO-based planar devices, which may benefit the development of high-performance photodetectors.
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