Heat Confinement of Phase-Change Memory Using Graphene

Liang Chen,Rong Xue,Shuangtao Chen,Yu Hou
DOI: https://doi.org/10.1109/itherm.2017.7992465
2017-01-01
Abstract:Reducing the heat loss is a key pathway for advancing phase change memory (PCM) technology because a good thermal confinement can facilitate the fast phase transition and reduce the programing power. In this study, the thermal boundary resistance between graphene and tungsten electrode heater is investigated. Density functional theory (DFT) and atomistic Green's function (AGF) based approach is employed to explore the interfacial phonon transport across the graphene-electrode interfaces. Interfacial structure is optimized using DFT calculations, and the interaction between graphene/electrode is analyzed based on the electronic structure and cohesive energy. Phonon coupling at the graphene/electrode interface is studied through the analysis of phonon dispersion relations and phonon density of states. The AGF results show that the phonon transmission is limited to 4 THz depending on the phonon spectrum in tungsten and a thermal boundary resistance of 21.3 m2(K)/GW is obtained at physisorption interface between single layer graphene and tungsten. This study will provide insights to understand the thermal transport mechanism in PCM and guidelines to engineer the interfaces for better thermal confinement.
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