Abstract:In spite of the merits such as Earth abundance and high performance, Cu2ZnSn(S,Se)4 (CZTSSe) solar cells suffer from unfavorable SnZn antisite defects and complexes, which act as nonradiative recombination centers and deteriorate the open‐circuit voltage (VOC). Therefore, the management of Sn composition is the prerequisite for achieving high‐efficiency CZTSSe photovoltaic devices. At present, the Sn‐related composition and defect modifications at different selenization pressures remain unclear, which restrain the development of efficient kesterite solar cells. Herein, a facile yet effective strategy to accurately adjust the Sn content in CZTSSe films by simply optimizing the selenization pressure is demonstrated. Compared with the widely used atmospheric pressure, it is unveiled that the appropriate negative pressure (0.7 atm) can tailor the optimal Sn content in the absorber layer, influencing both the Sn‐related defects and the microstructures. In contrast, a lower (0.4 atm) and a higher (1.3 atm) selenization pressure results in undesirable deep CuSn defects and a Sn(S,Se)2 secondary phase, respectively. A champion device fabricated at this optimal selenization pressure (0.7 atm) exhibits a power conversion efficiency of 11.32% with a VOC of 0.496 V. This study paves the path toward highly efficient kesterite solar cells by tailoring the composition‐dependent defects. An efficient strategy is proposed to accurately adjust the Sn content and Sn‐related defects by tuning the selenization pressure from 0.4 to 1.3 atm. A champion device fabricated at the optimal selenization pressure (0.7 atm) exhibits a power conversion efficiency of 11.32% with a VOC of 0.496 V.

Influence of Se Beam Pressure on Deep-Level Defects in Cu(In,Ga)Se-2 Thin Films Studied by Photocapacitance and Time-Resolved Photoluminescence Measurements

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Defect Physics of the Quasi-Two-dimensional Photovoltaic Semiconductor GeSe

Photon-induced Defects and Dynamics of Photogenerated Carriers in Cu(In,Ga)Se2 Thin Film Solar Cells

Investigation into complex defect properties of near-stoichiometric Cu2ZnSnSe4 thin film

Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films

Deep defects limiting the conversion efficiency in Sb2Se3 thin-film solar cells

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se2 Solar Cells.

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Spatially resolved photoluminescence analysis of the role of Se in CdSe x Te 1−x thin films

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

Origin of Reduced Efficiency in Cu(In,Ga)Se Solar Cells With High Ga Concentration: Alloy Solubility Versus Intrinsic Defects

Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 - Impact of front surface recombination and its temperature dependence

Complicated and Unconventional Defect Properties of the Quasi-One-Dimensional Photovoltaic Semiconductor Sb2Se3.

Composition dependence of electronic defects in CuGaS2

Optimization of the Selenization Pressure Enabling Efficient Cu 2 ZnSn(S,Se) 4 Solar Cells

Ultrafast photocarrier dynamics of CdSexTe1-x polycrystalline films under low illumination

Eliminating the Excess CuxSe Phase in Cu-rich Cu(In,Ga)Se2 by In2Se3 Treatment