Electron spin-polarization and spin-gapless states in an oxidized carbon nitride monolayer

Hongcai Zhou,Xiaobiao Liu,Bo Yang,Yuanyuan Qu,Hongxia Bu,Mingwen Zhao
DOI: https://doi.org/10.1039/c6ra19423k
IF: 4.036
2016-01-01
RSC Advances
Abstract:Electron spin-polarization in metal-free organic materials is currently drawing considerable attention due to their applications in organic electronics. Using first-principles calculations, we propose a stable two-dimensional (2D) honeycomb lattice oxidized carbon nitride material, C2NO. The energetic favorability, phonon spectrum and molecular dynamics simulation confirm the stability and plausibility of the C2NO material. The electronic structure of the metal-free organic material is spin-polarized, yielding magnetic moments of 1.0 mu B in one primitive cell. More interestingly, the spin-polarized electronic band lines have a zero band gap at the Fermi level, exhibiting spin-gapless features. These unique properties are promising for spin detectors and generators for electromagnetic radiation over a wide range of wavelengths based on the spin photoconductivity.
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