Half-metallicity in a Honeycomb-Kagome-lattice Mg3C2 Monolayer with Carrier Doping

Hongzhe Pan,Yin Han,Jianfu Li,Hongyu Zhang,Youwei Du,Nujiang Tang
DOI: https://doi.org/10.1039/c8cp01727a
2018-01-01
Abstract:To obtain high-performance spintronic devices with high integration density, two-dimensional (2D) half-metallic materials are highly desired. Herein, we proposed a stable 2D material, i.e., the Mg3C2 monolayer, with a honeycomb-kagome lattice based on the particle-swarm optimization algorithm and first-principles calculations. This monolayer is an anti-ferromagnetic (AFM) semiconductor in its ground state. We have also demonstrated that a transition from an AFM semiconductor to a ferromagnetic half-metal in this 2D material can be induced by carrier (electron or hole) doping. The half-metallicity arises from the 2p(z) orbitals of the carbon (C) atoms for the electron-doped system and from the C 2p(x) and 2p(y) orbitals in the case of hole doping. Our findings highlight a new promising material with controllable magnetic and electronic properties towards 2D spintronic applications.
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