Abstract:For preparation of transparent conductive oxide (TCO)/metal/TCO tri-layer films, Cu and Ga-doped ZnO (GZO) films were respectively used as the metal and TCO layers and were deposited by magnetron sputtering at room temperature. The effect of film thickness on transparent conductive properties of single Cu films was first investigated in order to better understand the properties of tri-layer films. The results show that the resistivity, sheet resistance (R-s), average transmittance in visible light range (T(Vi)s), and figure of merit (FOM) of Cu films decrease with increasing film thickness. The investigations of effect of H-2 flux on the transparent conductive properties of GZO films show that hydrogenated GZO (HGZO) films have lower resistivity and higher TVis than those of GZO films. On basis of the investigation of single Cu and GZO films, the GZO/Cu/GZO (GcG) and HGZO/Cu/HGZO (HcH) tri-layer films were prepared, and their transparent conductive properties were investigated as a function of Cu and GZO (or HGZO) layer thickness. The results show that these two kinds of tri-layer films have the best FOM at Cu layer thickness of 7 nm and GZO (or HGZO) layer thickness of 40 nm. Compared with GcG tri-layer films, HcH tri-layer films have better FOM, indicating that introducing H-2 into sputtering atmosphere plays a significant role on the transparent conductive properties of the tri-layer films. In addition, bandgap (E-g) of single GZO and tri-layer films was discussed as a function of carrier concentration in the paper.

Numerical Simulation on Optical Characteristics of ZnO/Cu/ZnO Thin Film.

Effect of Cu Concentration on Optical Properties of Zn1-xCuxO Thin Films

Effect of seed layer on optical properties and visible photoresponse of ZnO/Cu 2 O composite thin films

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Fabrication and Properties of Transparent Conductive AZO/Cu Bilayer Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Optical Properties of Cu-doped Thin ZnO Films

Effect of the ZnO buffer layer thickness on AZO film properties

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Evaluation of Substrate Material and Cu-doping Effect on the Microstructural and Optical Behavior of ZnO Films

Optical properties of ultrathin ZnO films fabricated by atomic layer deposition

Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition

Transparent conductive and near-infrared reflective Cu-based Al-doped ZnO multilayer films grown by magnetron sputtering at room temperature

First-principles Simulation and Experimental Evidence for Improvement of Transmittance in ZnO Films

Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Third-order Optical Nonlinearities of Zn_(1-x)MgxO Thin Films