Abstract:With the rapid development of wireless communications, GaN HEMTs, which have various advantages of high power density, high electron mobility, and high breakdown threshold, have attracted increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal models are vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electrom mobility transistors (HEMTs) accurately. A series of scaling rules are established for the intrinsic parameters of the device, including drain-source current I ds , input capacitance C gs and C gd , which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performances of the L-band GaN high-efficiency power amplifier with the length of gate of 14.4mm is analyzed. This amplifier demonstrates outstanding performance with the output power up to 46.5dBm and the drain efficiency of over 70% covering the entire frequency range from 1120MHz to 1340MHz. Great agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for the design of advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model lacks the ability to characterize the dynamical behavior induced by trap and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity will be investigated to broaden the applicability of the proposed model in the case of continuous waves.

An Improved Large Signal Model For Algan/Gan Hemts Including Comprehensive Thermal Effect

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

An improved small‐signal model for GaN HEMTs devices

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

An Improved Nonlinear I‐V Model for GaN HEMTs

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Analytical Thermal Model for AlGaN/GaN HEMTs Using Conformal Mapping Method

A large signal scaling model of high power GaN microwave device

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices

A Verilog-A Large Signal Model for InP DHBT Including Thermal Effects

Model the AlGaN/GaN high electron mobility transistors

Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor