Abstract:High‐performance ZnSe/ZnS quantum dot light‐emitting diodes (QLEDs) are realized by constructing poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl) diphenylamine) (TFB)/2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) stepwise double hole‐transport layers (HTLs). The TFB/C8‐BTBT HTLs suppress interfacial electron accumulation and passivate the surface. The resulting device achieves an external quantum efficiency (EQE) of 7.23%, which is almost 150% higher than that of pristine devices (4.84%). ZnSe/ZnS core/shell quantum dots (QDs) are environmental‐friendly blue light‐emitting material, which can easily achieve deep blue emission upon external excitation. However, its deep valence band (VB) and numerous defect states remain handicap to realize sufficient performance of quantum dot light‐emitting diodes (QLEDs). In this work, high‐performance cadmium‐free ZnSe/ZnS QLEDs by constructing a double organic hole‐transport layer (HTL) to obtain carrier balance are presented. The double HTLs, which consist of poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl)diphenylamine) (TFB) and 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT), can suppress the accumulation of electrons between the HTL and the emissive layer (EML), leading to more hole and electron recombination luminescence in QD layer. In addition, the C8‐BTBT layer is conducive to improve the uniformity of QDs film. Thus, the resulting device achieves an external quantum efficiency of 7.23% with TFB/C8‐BTBT double HTLs, which is almost 150% higher than that of traditional devices based on a single hole‐transport layer (4.84%). The authors anticipate that these results can provide a guidance for the optimization of cadmium‐free blue QLEDs.

Blue Quantum Dot Light-Emitting Diodes with High Luminance by Improving the Charge Transfer Balance

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Stable Blue Quantum Dot LED with 23% external quantum efficiency

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Blue Quantum Dot Light-Emitting Diodes with High Electroluminescent Efficiency

High‐Performance Blue Quantum‐Dot Light‐Emitting Diodes by Alleviating Electron Trapping

Improved Color Purity and Efficiency of Blue Quantum Dot Light-Emitting Diodes

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

High‐Performance Cadmium‐Free Blue Quantum Dot Light‐Emitting Devices with Stepwise Double Hole‐Transport Layers

Boosting External Quantum Efficiency of Blue Perovskite QLEDs Exceeding 23% by Trifluoroacetate Passivation and Mixed Hole Transportation Design

Balanced charge transport and enhanced performance of blue quantum dot light-emitting diodes via electron transport layer doping

High-efficiency, low turn-on voltage blue-violet quantum-dot-based light-emitting diodes

Enhancing performance in blue quantum-dot light-emitting diodes by using a deep HOMO carbazol-phenyl-triazine small molecule blended hole transporting layer

Stable and efficient pure blue quantum-dot LEDs enabled by inserting an anti-oxidation layer

Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping

Highly efficient blue quantum-dot light-emitting diodes based on the mixed composite of carbazole donor and triazine acceptor as hole transport layer

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative

Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes.

Improving blue quantum dot light-emitting diodes by a lithium fluoride interfacial layer

Highly Efficient Blue Perovskite Quantum Dots Light-Emitting Diodes Based on Ligand-Assisted Anion Exchange Method

44.2: Invited Paper: Quantum Dot Light‐Emitting Diodes for Lighting