A Numerical Solution of Electron Tunneling in Thin Films

张虹霞,唐祯安
DOI: https://doi.org/10.3969/j.issn.1004-3365.2004.03.011
IF: 1.992
2004-01-01
Microelectronics Journal
Abstract:Numerical solution of electron tunneling in thin films is presented. This method can be used to calculate one-dimensional barriers with complicated shapes. Schroedinger equation is numerically solved with Runge-Kutta and Numerov algorithm. Based on the results, electron transmission coefficient is obtained by taking into account the effect of computational errors and error reductions. The calculated result is compared with that from the precise analytical method. The resonance electron tunneling in different double-barrier structures is also discussed.
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