Abstract:Abstract With its monoelemental composition, various crystalline forms and an inherently strong spin–orbit coupling, bismuth has been regarded as an ideal prototype material to expand our understanding of topological electronic structures. In particular, two-dimensional bismuth thin films have attracted a growing interest due to potential applications in topological transistors and spintronics. This calls for an effective physical model to give an accurate interpretation of the novel topological phenomena shown by two-dimensional bismuth. However, the conventional semi-empirical approach of adapting bulk bismuth hoppings fails to capture the topological features of two-dimensional bismuth allotropes because the electronic band topology is heavily influenced by crystalline symmetries. Here we provide a new parameterization using localized Wannier functions derived from the Bloch states in first-principles calculations. We construct new tight-binding models for three types of two-dimensional bismuth allotropes: a Bi (111) bilayer, bismuthene and a Bi (110) bilayer. We demonstrate that our tight-binding models can successfully reproduce the electronic and topological features of these two-dimensional allotropes. Moreover, these tight-binding models can be used to explain the physical origin of the occurrence of novel band topology and the perturbation effects in these bismuth allotropes. In addition, these models can serve as a starting point for investigating the electron/spin transport and electromagnetic response in low-dimensional topological devices.

Resolving the Topological Classification of Bismuth with Topological Defects.

Topological Classification of Intrinsic 3D Superconductors Using Anomalous Surface Construction

Higher-Order Topology in Bismuth

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Helical Metal Inside a Topological Band Insulator

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

Modification of electronic, magnetic structure and topological phase of bismuthene by point defects

Quasi-one-dimensional topological material Bi<sub>4</sub>X<sub>4</sub>(X=Br,l)

One-dimensional topologically protected modes in topological insulators with lattice dislocations

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Quasi-one-dimensional Topological Material Bi4X4(X=Br,I)

Scanning Tunneling Microscopy Observation of the Hinge States of Bismuth Nanocrystals

Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth

Stability of topological properties of bismuth (111) bilayer

Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Topological Insulators from Group Cohomology

A Novel Quasi-One-dimensional Topological Insulator in Bismuth Iodide Β-Bi4i4.

Topological Edge and Corner States in Bismuth Fractal Nanostructures

Electronic and spin transport in Bismuthene with magnetic impurities