Crystal Growth and Characterization of New Piezoelectric Crystals La3Ga5SiO14

王增梅,袁多荣,潘立虎,张沛霖,李正法,程秀凤,吕衍秋,段秀兰,郭世义,吕孟凯,许东
DOI: https://doi.org/10.3969/j.issn.1004-2474.2003.06.016
2003-01-01
Abstract:La_3Ga_5SiO_(14) (LGS) single crystals have been successfully grown using Czochralski technique. The X-ray powder diffraction (XRPD) of single crystal was performed to identify the crystal structure. The data of thermal expansion coefficients along Y and Z direction have been measured to be 5×10~(-6) K~(-1) and 3.8×10~(-6) K~(-1), respectively. The specific heat of the crystal has been measured to be 0.90 J/gK at 453.15 K. The transmittance spectra range from 200 to 800 nm were measured. Whole set of piezoelectric and elastic constants were measured.
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