Far-field Characteristics of High Power Laser Diode
李丽娜,吴金辉,宋俊峰
DOI: https://doi.org/10.3321/j.issn:1000-7032.2004.01.020
2004-01-01
Abstract:In recent years, the high power lasers have been widely applied in military, industry, medicine, such as in the strong laser weapon, laser detonator, laser guidance, precise machine processes, light storage, light pumps, laser chemistry, laser medicine and so on. Because of the asymmetry of semiconductor laser output beam, the beam must be shaped by optical system in some cases. The far-field characteristics of laser out put must be understood during designing the optical element and optical coupling.Furthermore, optical-field characteristics of laser cavity can be obtained by correct far-field modal with measure data. In this project,the Helmholtz equation was solved by the cleavage facet boundary condition of quantum-well laser. So the density distribution of far-field and divergence angle of beam were obtained. The theoretical curves and data obtained by computation were ploted also. The curve of the far-field distribution of laser and the measure data by the semiconducter laser all-parameter measurement meter, including the far-field intensity profile and the beam divergence angle. The experimental results are in agreement with the theory. The laser sample used in the experimental measurement is 82~# laser diode, CW output power as 2.01 W, operating current as 10.53 A, operating voltage as 1.7 V, slope efficiency as 1.01 W/A, center wavelength as 801.8 nm, spectral width 2 nm, emitting dimensions 150 μm×1 μm, divergence angle of perpendicular junction plan as 28.8°, divergence angle of parallel junction plane as 7.5°, the experimental measurement performed with a separation distance of 50 mm from the laser cavity surface. The results showed that the theoretical far-field intensity distribution curve is in accordance with the experimental measurement data basically.