Abstract:Hydrogenation of the ZnO:Ga network has been chosen as a promising avenue to further upgrade the optoelectronic and structural properties of the films. With an optimum incorporation of hydrogen at a low substrate temperature (TS = 100 °C) in RF magnetron sputtering plasma, the ZnO:Ga:H film, with a large crystallite size (∼17 nm) and improved crystallinity along the optimally preferred c-axis orientation with respect to both the 〈100〉 (I〈002〉/I〈100〉 ∼ 74) and 〈103〉 (I〈002〉/I〈103〉 ∼ 10) directions, attains a high electrical conductivity (σ ∼ 1.5 × 10(3)) and ∼90% visible range optical transmission that yields a wide optical band gap of ∼3.78 eV. The dominant c-axis orientation of the ZnO crystals exhibits a distinct UV luminescence band at ∼340 nm that arises as a result of the typical exciton emission or near-band-edge emission, which occurs due to the recombination of photo-generated electrons and holes in the valence band or in traps near the valence band. Vacancies created by the out diffusion of oxygen from the network induces the growth along the 〈103〉 crystallographic orientation. With the introduction of an optimum amount of hydrogen into the network, the VO peak (OII) in the O 1s XPS spectrum significantly reduces in intensity while the Zn-OH peak (OIII) increases, indicating enhanced surface absorption of O species, which causes the improvement of c-axis orientation. The increase in the conductivity has been attributed to the centers assigned to isolated hydrogen atoms in the anti-bonding sites (ABO) or bond-centered sites of O-Zn bonds (BC), and Zn vacancies passivated by one or two hydrogen atoms. Hydrogen-induced dopant-like defects in the film and the associated large amount of tensile stress developed within the network has been correlated to the high conductivity and the wide band gap of the ZnO:Ga:H film due to the decreased repulsion between the O 2p and the Zn 4s bands and the Burstein-Moss effect as a consequence of the increased carrier concentration. Highly conducting and transparent c-axis oriented ZnO:Ga:H films grown by a device compatible process at a low TS are extremely useful for various stacked layer thin film devices, including solar cells.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: from Simulation to Experiment.

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors

Enhanced Mobility Of Solution-Processed Polycrystalline Zinc Tin Oxide Thin-Film Transistors Via Direct Incorporation Of Water Into Precursor Solution

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

The Influence of the Hafnium Doping on Negative Bias Stability in Zinc Oxide Thin Film Transistor

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors