Manipulate the Electronic and Magnetic States in NiCo2O4 Films Through Electric-Field-Induced Protonation at Elevated Temperature

Meng Wang,Xuelei Sui,Yujia Wang,Yung-Hsiang Juan,Yingjie Lyu,Huining Peng,Tongtong Huang,Shengchun Shen,Chenguang Guo,Jianbing Zhang,Zhuolu Li,Hao-Bo Li,Nianpeng Lu,Alpha T. N'Diaye,Elke Arenholz,Shuyun Zhou,Qing He,Ying-Hao Chu,Wenhui Duan,Pu Yu
DOI: https://doi.org/10.1002/adma.201900458
IF: 29.4
2019-01-01
Advanced Materials
Abstract:Ionic-liquid-gating- (ILG-) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5, VO2, WO3, etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2O4, an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. This study shows that environmental temperature is an efficient tuning knob to manipulate ILG-induced ionic evolution.
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