High Performance Graphene/Silicon Photodetectors and Image Sensors

Yang Xu
DOI: https://doi.org/10.1109/edssc.2018.8487134
2018-01-01
Abstract:To solve the typical problems of silicon-based invisible photodetectors and image sensors, we focus on the ultraviolet (UV), infrared (IR) photodetection and their imaging integration system. In recent years, we have achieved the following systematic research outcomes: 1) By proposing a new silicon-graphene synergistic absorption theory and using the silicon-on-insulator (SOI) integrated with graphene structure, we broke the limit of traditional silicon-based UV detection, and fabricated high-speed UV photodetectors and imagers; 2) By proposing a cascade structure combined with plasmon resonant absorption, we fabricated high-performance Silicon-based IR photodetectors and imagers; 3) By integrating large photodetector arrays with signal processing circuits, we established high-performance silicon-based broadband imaging system for potential applications.
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