High Performance Bidirectional IGBT with Sandwich Super Junction Structure

Jinping Zhang,Qian Zhao,Junyi Luo,Zehong Li,Min Ren,Zhaoji Li,Bo Zhang
DOI: https://doi.org/10.1109/edssc.2018.8487176
2018-01-01
Abstract:A high performance bidirectional insulated gate bipolar transistor (BIGBT) with sandwich super junction structure (SSJ-BIGBT) is proposed. The proposed device features a SJ drift region sandwiched between two symmetrical N-buffer layers. In comparison with conventional non-punch-through (NPT) BIGBT, the novel structure offers not only symmetrical high breakdown voltage, but also improved E off -V on trade-off characteristics in both directions.
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