Ab initio study of H/O trapping and clustering on U/Al interface

Wenhong Ouyang,Wensheng Lai,Zhengjun Zhang
DOI: https://doi.org/10.1088/1674-1056/27/9/097303
2018-01-01
Chinese Physics B
Abstract:Al coating on U surfaces is one of the methods to protect U against environmental corrosion. The behaviors of hydrogen and oxygen impurities near the Al/alpha-U interface have been studied in the density functional theory framework. It turns out that U vacancies tend to segregate to the interface with segregation energies of around 0.5-0.8 eV. The segregated U vacancy can act as a sink for H and O impurities, which is saturated when filled with 8 H or 6 O atoms, respectively. Moreover, the O impurities tend to stay in the Al layer while the H impurities prefer to diffuse into the U lattice, suggesting that the Al coating can play a significant role against oxidation but not against hydrogenation of U.
What problem does this paper attempt to address?