Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Surface Oxidation Behavior in Air and O2-H2O-Ar Atmospheres of Continuous Freestanding SiC Films Derived from Polycarbosilane

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Oxidation Behavior of Dense SiC Coating in Water Vapor and Its Mixed Atmosphere with Air

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

The Oxidation Behavior of Multi-layered SiC Coated Graphite in Water Vapor Containing Environment

High Temperature Oxidation Behavior of SiC Coating Materials

SiC Performance of Coated Fuel Particles under High-Temperature Atmosphere of Air

Long-time oxidation behavior of the nearly stoichiometric polycrystalline SiC fibers under air atmosphere at different temperatures

Degradation mechanism of near stoichiometric SiC fibers after air and Ar‐H2O‐O2 corrosion at 1000∼1500°C

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Oxidation Behavior of SiCf/SiC Composites Modified by Layered-Y2Si2O7 in Wet Oxygen Environment

Comparison of Oxidation Behaviors of 3D C/PyC/SiC and SiC/PyC/SiC Composites in an O2-Ar Atmosphere

Enhanced wet-oxidation resistance of Y2O3 modified SiC ceramics by the formation of Y2Si2O7 protective layer

Oxidation behavior of dense SiOC monolithics: The oxide scale development

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

The Comparative Investigation of Oxidation Behavior and Corrosion Mechanisms of SiC Matrix Ceramics under Different Atmospheres

Oxidation Resistance of a Si-TiSi2-MoSi2-TiB2-CaSi2 Coating on a Cf/C-SiC Substrate in High-Speed High-Enthalpy Air Plasma Flows

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

Oxidation behavior and cracking evolution of atmospheric plasma spraying Si and 60Si-40HfO2 bond coats at 1400 °C

Oxidation of ZrC-30vol% SiC composite in air from low to ultrahigh temperature

The Oxidation Behavior and Corrosion Mechanism of SiC Matrix Ceramics in a High Temperature Wet Air Environment