Abstract:A unique semi‐coherent phase interface, characterized by low lattice mismatch, ensures high carrier mobility while reducing the lattice thermal conductivity at low and medium temperatures of the matrix. Coupled with the dynamic doping effect of Cu, the electrical and thermal transport properties of the n‐type PbSe samples are comprehensively enhanced. N‐type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single‐band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n‐type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n‐type AgCuTe‐alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi‐coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi‐coherent phase interface effectively scatters low‐frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high‐temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n‐type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.

Synergistically Optimizing Electrical and Thermal Transport Properties of N-Type PbSe

Synergistically optimizing interdependent thermoelectric parameters of n-type PbSe through alloying CdSe

Enhancing Thermoelectric Performance of p-Type PbSe through Suppressing Electronic Thermal Transports

Synergistically optimizing interdependent thermoelectric parameters of n-type PbSe through introducing a small amount of Zn

Synergistically Optimizing Thermoelectric Transport Properties of N-Type PbTe Via Se and Sn Co-Alloying

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

High Thermoelectric Efficiency Of N-Type Pbs

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High Performance of N-Type (Pbs)(1-X-y)(pbse)(x)(pbte)(y) Thermoelectric Materials

Enhancing Thermoelectric Performance of N-Type PbTe Through Separately Optimizing Phonon and Charge Transport Properties

Synergistically Optimizing Charge and Phonon Transport Properties in N-Type PbTe Via Introducing Ternary Compound AgSb(Se, Te)2

Boosting the Thermoelectric Properties of N-Type PbSe Through the Dual Incorporation of Sb and Al

Synergistically Enhancing Thermoelectric Performance of N‐type PbTe with Indium Doping and Sulfur Alloying

Realizing Ultrahigh Thermoelectric Performance in n‐Type PbSe Through Lattice Planification and Introducing Liquid‐Like Cu Ions

Boosting the Thermoelectric Performance of PbSe from the Band Convergence Driven By Spin‐Orbit Coupling

Comprehensive Investigation on the Thermoelectric Properties of P‐type PbTe‐PbSe‐PbS Alloys

Bridging the miscibility gap towards higher thermoelectric performance of PbS

Enhancement of Thermoelectric Performance of N‐type PbSe by Cr Doping with Optimized Carrier Concentration