Pressure-induced Enhancement of Optoelectronic Properties in PtS2

Yi-Fang Yuan,Zhi-Tao Zhang,Wei-Ke Wang,Yong-Hui Zhou,Xu-Liang Chen,Chao An,Ran-Ran Zhang,Ying Zhou,Chuan-Chuan Gu,Liang Li,Xin-Jian Li,Zhao-Rong Yang
DOI: https://doi.org/10.1088/1674-1056/27/6/066201
2018-01-01
Chinese Physics B
Abstract:PtS2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressure-dependent below 3 GPa but increases significantly in the pressure range of 3 GPa-4 GPa, with a maximum similar to 6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to 26.8 GPa, which indicates a stable lattice structure of PtS2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi- direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.
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