Simultaneously Enhanced Power Factor and Phonon Scattering in Bi0.4Sb1.6Te3 Alloy Doped with Germanium

Y. S. Wang,L. L. Huang,C. Zhu,J. Zhang,D. Li,H. X. Xin,M. H. Danish,X. Y. Qin
DOI: https://doi.org/10.1016/j.scriptamat.2018.05.026
IF: 6.302
2018-01-01
Scripta Materialia
Abstract:The thermoelectric properties of Ge-doped Bi0.4Sb1.6-xGexTe3 (x = 0, 0.01, 0.015, 0.02) were investigated in the temperature range from 300 K to 525 K. The results show that Ge doping brings about 13-52% increase in electrical conductivity due to the increase of hole concentration, and 5-11% decrease in thermal conductivity owing to enhanced phonon scattering by the dopant atoms. As a result, a maximum thermoelectric figure of merit (ZT) reaches 1.48 at 350 K for Bi0.4Sb1.59Ge0.01Te3, which is similar to 25% larger than that of Bi0.4Sb1.6Te3. Present results demonstrate that Ge doping is an effective way to enhance the thermoelectric performance of Bi0.4Sb1.6Te3 alloy. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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