Enhanced and Wavelength-Tunable Near-Infrared Luminescence from Bismuth-Doped Silica Thin Films with Au Nanocrystals
Xiaowei Zhang,Pengjun Wang,Dongfeng Qi,Yanyan Huang,Bolin Zheng,Tao Lin,Ping Chen,Zhongwei Yu,Jun Xu
DOI: https://doi.org/10.1016/j.jallcom.2018.09.086
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:Near-infrared (NIR) luminescence origin of Bi-doped amorphous silica thin film is elucidated by the XPS characterizations and selective photoluminescence (PL) measurements. The excitation wavelength-dependent NIR luminescence suggests the co-existence of two different types of Bi-related active centers, Bi-0 and Bi+, should contribute to the NIR PL emissions at 1150 nm and 1280 nm, respectively. A confined crystallization growth strategy is designed for fabricating the uniform-size Au nanocrystals (NCs) embedded in Bi-doped amorphous silica thin film. Via controls of the doping amounts of Au ions, the NIR PL emission of Bi ions in amorphous silica thin film can be wavelength-tunable and enhanced by nearly 300% on the optimum Au ions doping amount. Temperature-dependent PL emission spectra demonstrate parts of Au ions play a role of eliminating hydroxyl groups and give rise to greatly enhanced NIR PL emission intensity. We anticipate that both the greatly enhanced and wavelength-tunable PL emission and the discussion of NIR luminescence origin will shed light on future research of Bi-doped luminescent materials. (C) 2018 Elsevier B.V. All rights reserved.