Atomic Structure and Electronic Properties of Zr Adsorption on CeO2 (111) Surface by the First-Principles Method

Huiling Jia,Baogen Ren,Mei Li,Xuejie Liu,Jinxiu Wu,Xin Tan
DOI: https://doi.org/10.1016/j.physb.2020.412060
IF: 2.988
2020-01-01
Physica B Condensed Matter
Abstract:To research the influence of Zr adsorption on polishing performance of the CeO2 (111) crystal plane, a scheme of the first-principles calculation was utilized to calculate structures and electronic properties of Zr absorption on the CeO2 (111) and CeO2-x (111) surface systems. The analysis indicates that the most stable adsorption site of Zr on CeO2 (111) surface is the oxygen bridge site. The Zr adsorption energy on the CeO2-x (111) surface is greater than that on the CeO2 (111) surface. The 4d orbital of Zr atom is hybridized with the 2p orbital of the nearest O atoms, the Fermi level is spanned, and the band gap disappears. A Zr-induced gap state (metal-induced gap state [MIGS]) appears between Ce-4f and O-2p states, and presents double peaks. Zr adsorption reduces the O vacancy formation energy on the CeO2 (111) surface, and residual electrons are localized on the two nearest Ce atoms.
What problem does this paper attempt to address?