O-vacancy and surface on CeO2: A first-principles study

Siqi Shi,Yuanhao Tang,Chuying Ouyang,Lixia Cui,Xiaogui Xin,Peijuan Li,Weiwei Zhou,Hua Zhang,Minsheng Lei,Liquan Chen
DOI: https://doi.org/10.1016/j.jpcs.2010.02.002
IF: 4.383
2010-01-01
Journal of Physics and Chemistry of Solids
Abstract:Atomic and electronic structures of CeO2 (111), (110) and (100) surfaces are investigated using the first-principles density functional theory taking into account the on-site Coulomb interaction. Both the stoichiometric and O-deficient surfaces are examined in order to clarify the overall features. The CeO2 (111) is found to be the most stable surface, followed by the (110) and (100) surfaces, consistent with experimental observations. Three surfaces exhibit different features of relaxation. Large relaxations are found at the (110) and (100) surfaces, while very small changes are observed at the (111) surface. It is found that the O-vacancy occurs more readily at the (110) surface as compared with the (111) surface. Furthermore, the formation energies of the O-vacancy in the surfaces are lower than that in the bulk. The energetically favorable O-vacancy locates in the second O-atomic layer for the (111) while at the surface layer for the (110). The excess electrons left with the removal of the O atom are distributed in the first two layers with certain (a considerable) fraction filling the Ce-4f states.
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