Silicon Nitride Integrated All-optical Switch Assisted by Graphene

Ciyuan Qiu,Yuxing Yang,Chao Li,Yifang Wang,Kan Wu,Jianping Chen

DOI: https://doi.org/10.1364/cleo_at.2018.jw2a.27

2018-01-01

Abstract:An all-optical switch near 1550nm is realized on a graphene-on-silicon nitride (Si3N4) integrated platform with thermo-optic effect. A fast switching time of 253ns is obtained due to the high thermal conductivity of graphene.

What problem does this paper attempt to address?

Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

Chao Meng,Shao-Liang Yu,Hong-Qing Wang,Yue Cao,Li-Min Tong,Wei-Tao Liu,Yuen-Ron Shen

DOI: https://doi.org/10.1038/lsa.2015.121

2015-01-01

Abstract:Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse −1 (peak power ∼1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ∼3.2 W.
Electro-optical Logic Gates Based on Graphene–silicon Waveguides

Weiwei Chen,Longzhi Yang,Pengjun Wang,Yawei Zhang,Liqiang Zhou,Tianjun Yang,Yang Wang,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2016.04.008

IF: 2.4

2016-01-01

Optics Communications

Abstract:In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach–Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than −22.9dB within a bandwidth from 1510nm to 1600nm. The designed six electro-optical logic gates with the operation speed of 10Gbit/s have a minimum extinction ratio of 35.6dB and a maximum insertion loss of 0.21dB for transverse electric modes at 1.55μm.
High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Junying Li,Yizhong Huang,Yi Song,Lan Li,Hanyu Zheng,Haozhe Wang,Tian Gu,Kathleen Richardson,Jing Kong,Juejun Hu,Hongtao Lin

DOI: https://doi.org/10.1364/ome.382856

2019-01-01

Optical Materials Express

Abstract:The extraordinary optical properties of single-layer graphene have spurred the development of a variety of photonic components. We have previously demonstrated a scalable and versatile platform to facilitate the integration of graphene and other 2-D materials with chalcogenide glass-based planar photonics. In this paper, we detail the design criteria and optimization guidelines towards high-performance graphene-integrated thermo-optic (TO) switches based on the chalcogenide glass-on-graphene platform. Notably, absorption loss of graphene can be reduced to < 20 dB/cm when it is sandwiched inside photonic structures capitalizing on the anisotropic absorption property of graphene. We quantify energy efficiency of the TO switch, showing that the choice of cladding materials plays a critical role in improving device efficiency. Furthermore, we report a record TO switching efficiency of 10 nm/mW via judicious engineering of the overlap between optical mode and thermal profile.
Ultrafast and energy-efficient all-optical switching with graphene-loaded deep-subwavelength plasmonic waveguides

Masaaki Ono,Masanori Hata,Masato Tsunekawa,Kengo Nozaki,Hisashi Sumikura,Hisashi Chiba,Masaya Notomi

DOI: https://doi.org/10.1038/s41566-019-0547-7

2019-07-03

Abstract:All-optical switches have attracted attention because they can potentially overcome the speed limitation of electric switches. However, ultrafast, energy-efficient all-optical switches have been challenging to realize due to the intrinsically small optical nonlinearity in existing materials. As a solution, we propose graphene-loaded deep-subwavelength plasmonic waveguides (30 nm x 20 nm). Thanks to extreme light confinement, we have significantly enhanced optical nonlinear absorption in graphene, and achieved ultrafast all-optical switching with a switching energy of 35 fJ and a switching time of 260 fs. The switching energy is four orders of magnitudes smaller than that in previous graphene-based devices and is the smallest value ever reported for any all-optical switch operating at a few picoseconds or less. This device can be efficiently connected to conventional Si waveguides and employed in Si photonic integrated circuits. We believe that this graphene-based device will pave the way towards on-chip ultrafast and energy-efficient photonic processing.

Optics,Applied Physics
Ultrafast All-Optical Graphene Modulator.

Wei Li,Bigeng Chen,Chao Meng,Wei Fang,Yao Xiao,Xiyuan Li,Zhifang Hu,Yingxin Xu,Limin Tong,Hongqing Wang,Weitao Liu,Jiming Bao,Y. Ron Shen

DOI: https://doi.org/10.1021/nl404356t

IF: 10.8

2014-01-01

Nano Letters

Abstract:Graphene is an optical material of unusual characteristics because of its linearly dispersive conduction and valence bands and the strong interband transitions. It allows broadband light-matter interactions with ultrafast responses and can be readily pasted to surfaces of functional structures for photonic and optoelectronic applications. Recently, graphene-based optical modulators have been demonstrated with electrical tuning of the Fermi level of graphene. Their operation bandwidth, however, was limited to about 1 GHz by the response of the driving electrical circuit. Clearly, this can be improved by an all-optical approach. Here, we show that a graphene-clad microfiber all-optical modulator can achieve a modulation depth of 38% and a response time of ∼ 2.2 ps, limited only by the intrinsic carrier relaxation time of graphene. This modulator is compatible with current high-speed fiber-optic communication networks and may open the door to meet future demand of ultrafast optical signal processing.
Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Tao Chu,Nuo Chen,Weijie Tang,Yating Wu

DOI: https://doi.org/10.1364/OFC.2023.M4J.6

2023-01-01

Abstract:Large-scale high-speed photonic switches were demonstrated on silicon-on-insulator and thin-film Lithium Niobate platforms, respectively. Ultra-low-loss spot-size-converter, grating coupler, waveguide crossing, and high-speed switch unit are developed, as well as an integrated 128 x 128 switch.
All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Yu Zhang,Shuai Liu,Jiming Chen,Siying Cheng,Wei Jin,Yaxun Zhang,Zhihai Liu,Jianzhong Zhang,Libo Yuan

DOI: https://doi.org/10.1364/oe.468095

IF: 3.8

2022-01-01

Optics Express

Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.
Graphene-Based Floating-Gate Nonvolatile Optical Switch

Yan Li,Hui Yu,Tingge Dai,Jianfei Jiang,Gencheng Wang,Longzhi Yang,Wanjun Wang,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/lpt.2015.2494876

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:We proposed a nonvolatile optical waveguide switch by utilizing a floating-gate (FG) configuration whose FG layer is a single-layer graphene. The switching signal can be removed after the optical switching is accomplished. The propagation state of light then can be retained by charges trapped in the graphene layer until the next erasing signal. Depending on waveforms of driving signals, the device can work as either a phase shifter or an intensity switch. In the phase shifter mode, a 646-μm-long device can achieve a phase shift of π. Corresponding energy consumptions to program/erase, the π phase shift is 82.8 and 118.2 pJ, respectively. In the intensity switch mode, a 328-μm-long device is able to attenuate the light by 20 dB. Energies consumed by the programming and the erasing operations are 35.7 and 45.4 pJ, respectively.
Silicon Thermo-Optic Switches with Graphene Heaters Operating at Mid-Infrared Waveband

Chuyu Zhong,Zhibin Zhang,Hui Ma,Maoliang Wei,Yuting Ye,Jianghong Wu,Bo Tang,Peng Zhang,Ruonan Liu,Junying Li,Lan Li,Xiaoyong Hu,Kaihui Liu,Hongtao Lin

DOI: https://doi.org/10.3390/nano12071083

IF: 5.3

2022-03-25

Nanomaterials

Abstract:The mid-infrared (MIR, 2–20 μm) waveband is of great interest for integrated photonics in many applications such as on-chip spectroscopic chemical sensing, and optical communication. Thermo-optic switches are essential to large-scale integrated photonic circuits at MIR wavebands. However, current technologies require a thick cladding layer, high driving voltages or may introduce high losses in MIR wavelengths, limiting the performance. This paper has demonstrated thermo-optic (TO) switches operating at 2 μm by integrating graphene onto silicon-on-insulator (SOI) structures. The remarkable thermal and optical properties of graphene make it an excellent heater material platform. The lower loss of graphene at MIR wavelength can reduce the required cladding thickness for the thermo-optics phase shifter from micrometers to tens of nanometers, resulting in a lower driving voltage and power consumption. The modulation efficiency of the microring resonator (MRR) switch was 0.11 nm/mW. The power consumption for 8-dB extinction ratio was 5.18 mW (0.8 V modulation voltage), and the rise/fall time was 3.72/3.96 μs. Furthermore, we demonstrated a 2 × 2 Mach-Zehnder interferometer (MZI) TO switch with a high extinction ratio of more than 27 dB and a switching rise/fall time of 4.92/4.97 μs. A comprehensive analysis of the device performance affected by the device structure and the graphene Fermi level was also performed. The theoretical figure of merit (2.644 mW−1μs−1) of graphene heaters is three orders of magnitude higher than that of metal heaters. Such results indicate graphene is an exceptional nanomaterial for future MIR optical interconnects.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Optical Switch of Low-Insertion-loss Based on the Brewster Angle Effect

Jiayuan Xiong,Jun Zhu

DOI: https://doi.org/10.1117/1.oe.62.1.015105

IF: 1.3

2023-01-01

Optical Engineering

Abstract:Optical switches are critical components for optical communication devices, and currently, they are now bottlenecking the development of optical telecommunications. In this study, we propose an innovative all-optical Kerr switch based on the Brewster angle effect, which exhibits a graphene/SiO2/graphene/SiO2 structure and an insertion loss (IL) that can be minimized by tuning the Fermi level of the graphene layers. A novel Brewster's angle effect is achieved, resulting in a change in the incidence angle under nonlinear conditions as well as on-off switching of the phase change. The proposed switch has perfect absorption at an incident angle of 63 deg, where the phase of the reflected light is shifted from -pi to 0. Furthermore, the Brewster angle of the switch was successfully shifted from 63 deg to 80 deg with an incident frequency of 0.8 THz. It was observed that an increase in Fermi level continuously shrank the nonlinear region of the switch. The minimum IL of the proposed optical switch was only 2 dB, which is indicative of excellent energy efficiency. The results of this study can aid in the development of key devices for broadband communications and electromagnetic sensing. (c) 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Wanjun Wang,Haifeng Zhou,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/OL.37.002307

IF: 3.6

2012-01-01

Optics Letters

Abstract:We report on an experimental 3 x 3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1 x N and N x N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3 x 3 switching functionality is demonstrated at a wavelength of 1.55 mu m, with an average cross talk of -11.1 dB and a power consumption of 97.5 mW. (C) 2012 Optical Society of America
A Compact Silicon Nano-Wire Waveguide Optic Switch

T Chu,H Yamada,S Ishida,Y Arakawa

DOI: https://doi.org/10.1109/group4.2005.1516429

2005-01-01

Abstract:Based on silicon nano-wire waveguides, a compact Mach-Zehnder interferometer type optic switch was demonstrated through thermo-optic effect. The maximum extinction ratio was 20-dB, and the switching speed reached 0.1-ms.
Sub-picosecond all-optical switching in a hybrid VO2:silicon waveguide at 1550 nm

Kent A. Hallman,Kevin J. Miller,Andrey Baydin,Sharon M. Weiss,Richard F. Haglund

DOI: https://doi.org/10.48550/arXiv.2007.02812

2020-07-06

Optics

Abstract:Achieving ultrafast all-optical switching in a silicon waveguide geometry is a key milestone on the way to an integrated platform capable of handling the increasing demands for higher speed and higher capacity for information transfer. Given the weak electro-optic and thermo-optic effects in silicon, there has been intense interest in hybrid structures in which that switching could be accomplished by integrating another material into the waveguide, including the phase-changing material, vanadium dioxide (VO2). It has long been known that the phase transition in VO2 can be triggered by ultrafast laser pulses, and that pump-laser fluence is a critical parameter governing the recovery time of thin films irradiated by femtosecond laser pulses near 800 nm. However, thin-film experiments are not a priori reliable guides to using VO2 for all-optical switching in on-chip silicon photonics because of the large changes in VO2 optical constants in the telecommunications band, the requirement of low insertion loss, and the limits on switching energy permissible in integrated photonic systems. Here we report the first measurements to show that the reversible, ultrafast photo-induced phase transition in VO2 can be harnessed to achieve sub-picosecond switching when small VO2 volumes are integrated in a silicon waveguide as a modulating element. Switching energies above threshold are of order 600 fJ/switch. These results suggest that VO2 can now be pursued as a strong candidate for all-optical switching with sub-picosecond on-off times.
Hybrid silicon all-optical switching devices integrated with two-dimensional material

Daiki Yamashita,Nan Fang,Shun Fujii,Yuichiro K. Kato

2024-03-27

Abstract:We propose and demonstrate hybrid all-optical switching devices that combine silicon nanocavities and two-dimensional semiconductor material. By exploiting the refractive index modulation caused by photo-induced carriers in the two-dimensional material instead of the silicon substrate, we overcome the switching performance limitation imposed by the substrate material. Air-mode photonic crystal nanobeam cavities capable of efficient interaction with two-dimensional materials are fabricated, and molybdenum ditelluride, a two-dimensional material with rapid carrier recombination, is transferred onto the cavities. The molybdenum ditelluride flake is excited by an optical pump pulse to shift the resonant wavelength of the cavity for switching operation. We have successfully achieved all-optical switching operations on the time scale of tens of picoseconds while requiring low switching energies of a few hundred femtojoules.

Optics,Applied Physics
Broadband and Compact Two-Mode Switch Using a Graphene–silicon Y-junction

Shiqi Li,Weiwei Chen,Pengjun Wang,Shixun Dai,Bohao Zhang,Hao Lu,Jian Ding,Qiang Fu,Jun Li,Yan Li,Tingge Dai,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2019.06.050

IF: 2.4

2019-01-01

Optics Communications

Abstract:A compact two-mode switch with broad bandwidth is presented in this paper. The design of the proposed switch is based on a symmetric Y-junction which is composed of a silicon multimode straight waveguide, a silicon taper, and two symmetrical graphene-silicon s-bend waveguides. When voltage signals are applied to efficiently change the chemical potential of the embedded graphene, input modes can be separated, converted, and routed to the output ports flexibly at a high speed. Calculations indicate that, the crosstalk of the presented switch with an area of similar to 65x similar to 1.7 mu m(2) is less than -12.10 dB over a 95 nm band, the switching voltage for shifting the chemical potential is 4.18 V, the corresponding energy consumption is less than 2.90 pJ/bit, and the calculated 3-dB bandwidth larger than 47.94 GHz can be obtained.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
An Ultrafast All-Optical Switch with Silicon-Based Silica Structure

Wu Yongyu,Zhang Xiaoping,Shan Xinyan,Guo Lipeng

DOI: https://doi.org/10.3788/lop55.041303

2018-01-01

Abstract:As the basic structure of all-optical computing basic logic unit, the research progress of all-optical switch affects the development of all-optical computing and even the development of integrated optical field. An ultrafast all-optical switch with silicon-based silica structure is designed. The extinction ratio and the switch response time of the optically controlled optical switch are measured through two-color pump-probe experiment. The design of ultrafast all-optical switch with the switch intensity ratio of 7:1 and the switching time of 500 fs is realized.
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.
Graphene-Assisted Polymer Waveguide Optically Controlled Switch Using First-Order Mode

Yue Yang,Jiawen Lv,Baizhu Lin,Yue Cao,Yunji Yi,Daming Zhang

DOI: https://doi.org/10.3390/polym13132117

2021-06-28

Abstract:All-optical devices have a great potential in optical communication systems. As a new material, graphene has attracted great attention in the field of optics due to its unique properties. We propose a graphene-assisted polymer optically controlled thermo-optic switch, based on the Ex01 mode, which can reduce the absorption loss of graphene. Graphene absorbs 980 nm pump light, and uses the heat generated by ohmic heating to switch on and off the signal light at 1550 nm. The simulation results show that, when the graphene is in the right position, we can obtain the power consumption of 9.5 mW, the propagation loss of 0.01 dB/cm, and the switching time of 127 μs (rise)/125 μs (fall). The switching time can be improved to 106 μs (rise) and 102 μs (fall) with silicon substrate. Compared with an all-fiber switch, our model has lower power consumption and lower propagation loss. The proposed switch is suitable for optically controlled fields with low loss and full polarization. Due to the low cost and easy integration of polymer materials, the device will play an important role in the fields of all-optical signal processing and silicon-based hybrid integrated photonic devices.
Thermally Switchable/tunable Photonic Integrated Devices on Silicon

Daoxin Dai,Sitao Chen,Longhai Yu,Yaocheng Shi

DOI: https://doi.org/10.1109/piers.2016.7734966

2016-01-01

Abstract:Thermo-optic effect plays an important role and has been paid intensive attention for realizing switchable/tunable photonic integrated devices. In particular, it is possible to realize energy-efficient thermally switchable/tunable photonic integrated devices on silicon because of the high thermo-optical coefficient of silicon material. Recently we realized silicon-based ultra-broadband low-loss thermo-optic switches realized by using an 2 × 2 Mach-Zehnder Interferometer (MZI) with bent directional couplers. This MZI switch is scaled to realize N × N thermo-optic switches and also integrated with arrayed-waveguide gratings for ultra-compact reconfigurable add-drop multiplexers. In order to improve the thermal-tuning/switching efficiency, a novel transparent graphene nano-heater, which contacts the silicon core region directly, is demonstrated experimentally. These recent progress for thermally switchable/tunable photonic integrated devices on silicon is reviewed in this paper.

Silicon Nitride Integrated All-optical Switch Assisted by Graphene

Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

Electro-optical Logic Gates Based on Graphene–silicon Waveguides

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Ultrafast and energy-efficient all-optical switching with graphene-loaded deep-subwavelength plasmonic waveguides

Ultrafast All-Optical Graphene Modulator.

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Graphene-Based Floating-Gate Nonvolatile Optical Switch

Silicon Thermo-Optic Switches with Graphene Heaters Operating at Mid-Infrared Waveband

Optical Switch of Low-Insertion-loss Based on the Brewster Angle Effect

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

A Compact Silicon Nano-Wire Waveguide Optic Switch

Sub-picosecond all-optical switching in a hybrid VO2:silicon waveguide at 1550 nm

Hybrid silicon all-optical switching devices integrated with two-dimensional material

Broadband and Compact Two-Mode Switch Using a Graphene–silicon Y-junction

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

An Ultrafast All-Optical Switch with Silicon-Based Silica Structure

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Graphene-Assisted Polymer Waveguide Optically Controlled Switch Using First-Order Mode

Thermally Switchable/tunable Photonic Integrated Devices on Silicon

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators