Multi‐Level Electro‐Thermal Switching of Optical Phase‐Change Materials Using Graphene
Carlos Ríos,Yifei Zhang,Mikhail Y. Shalaginov,Skylar Deckoff-Jones,Haozhe Wang,Sensong An,Hualiang Zhang,Myungkoo Kang,Kathleen A. Richardson,Christopher Roberts,Jeffrey B. Chou,Vladimir Liberman,Steven A. Vitale,Jing Kong,Tian Gu,Juejun Hu
DOI: https://doi.org/10.1002/adpr.202000034
2020-11-05
Advanced Photonics Research
Abstract:Single‐layer graphene microheaters are used to electro‐thermally switch the optical phase‐change material Ge2Sb2Se4Te1, with powers down to 8.6 mW. Nonvolatile tunable integrated photonic modulators and reconfigurable 2π phase‐modulation metasurfaces are proposed using 3D simulations and experimental data. This framework enables scalable nonvolatile photonic devices with microheaters that are compatible to all photonic platforms and do not disrupt their optical performances.Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcome these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on‐chip integration with different photonic platforms and do not disrupt their optical performances. Herein, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that uses undoped‐graphene microheaters to thermally and reversibly switch the optical phase‐change material Ge2Sb2Se4Te1 (GSST). An in situ Raman spectroscopy method is utilized to demonstrate, in real‐time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si3N4 integrated photonic circuits with small form‐factor modulators and reconfigurable metasurfaces displaying 2π phase coverage through neural‐network‐designed GSST meta‐atoms. This framework will enable scalable, low‐loss nonvolatile applications across a diverse range of photonics platforms.