Low-voltage-worked Photodetector Based on Cu2O/GaOOH Shell-Core Heterojunction Nanorod Arrays

Kai Chen,Chenran He,Daoyou Guo,Shunli Wang,Zhengwei Chen,Jingqin Shen,Peigang Li,Weihua Tang
DOI: https://doi.org/10.1016/j.jallcom.2018.04.219
IF: 6.2
2018-01-01
Journal of Alloys and Compounds
Abstract:Cu2O/GaOOH shell-core heterojunction nanorod arrays (NRAs) were constructed by coating Cu2O on GaOOH NRAs through a simple and economical chemical bath deposition route. The obtained GaOOH NRAs crystalized in orthorhombic structure, with diameter range of 80-200 nm and an average height of 1 mu m. A p-n junction constructed with a p-type narrow bandgap Cu2O and a n-type wide bandgap GaOOH NRAs shows a broad photoresponse region ranging from 239 nm to 570 nm. The photodetector (PD) based on Cu2O/GaOOH heterojunction exhibited a photoresponsivity (R-lambda) of 6.95 A/W and an external quantum efficiency (EQE) of 2361% under the illumination of 365 nm ultraviolet (UV) light with a light intensity of 1.4 mW/cm(2) at a bias voltage of 0.5 V. What more interesting is that the PD still shown an obvious photoelectric response to 532 nm light with a very low bias voltage of 0.5 mV. Such low-voltageworked feature of Cu2O/GaOOH PD can be attributed to the built-in electric field formed at the interface between Cu2O and GaOOH, indicating a potential application in low power devices. (C) 2018 Elsevier B.V. All rights reserved.
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