Α-Ga2o3 Nanorod Array–Cu2O Microsphere P–n Junctions for Self-Powered Spectrum-Distinguishable Photodetectors

Chenran He,Daoyou Guo,Kai Chen,Shunli Wang,Jingqin Shen,Nie Zhao,Aiping Liu,Yingying Zheng,Peigang Li,Zhenping Wu,Chaorong Li,Fengmin Wu,Weihua Tang

DOI: https://doi.org/10.1021/acsanm.9b00527

IF: 6.14

2019-01-01

ACS Applied Nano Materials

Abstract:Most of the photodetectors can measure all of the light illumination with a wavelength below the absorption edge of the detector materials, while they cannot distinguish the different waveband. Herein, a self-powered spectrum distinguishable photoelectrochemical (PEC) type photo detector based on an alpha-Ga2O3 nanorod array (NA)/Cu2O microsphere (MS) p-n junction was reported. Under the combined action of the built-in electric field of the p-n junction and the semiconductor/electrolyte junction, the photodetector exhibits an opposite direction of the photo current to the illumination of 254 and 365 nm UV light under the applied bias of 0 V, which can be used to distinguish the different wavelengths of light. The photodetector shows a responsivity of 0.42 mA/W under 254 nm UV light and 0.57 mA/W upon 365 nm, respectively. Our results provide an idea for distinguishing the different illumination wavebands through a photodetector constructed by the heterojunction with two different band gap materials.