Direct Bandgap Type-I GeSn Quantum Well Toward Si-based Optoelectronics

Perry C. Grant,Joe Margetis,Yiyin Zhou,Wei Dou,Grey Abernathy,Andrian Kuchuk,Wei Du,Seyed A. Ghetmiri,Baohua Li,John Tolle,Jifeng Liu,Greg Sun,Richard A. Soref,Mansour Mortazavi,Shui-Qing Yu
DOI: https://doi.org/10.1364/cleo_si.2018.sth4i.4
2018-01-01
Abstract:GeSn single quantum well on relaxed GeSn and Ge buffered Si substrate was investigated. The direct bandgap well and type-I band alignment were achieved, which were confirmed by calculation and photoluminescence studies.
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