Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Monolithic Photonic Integration of Suspended Light Emitting Diode, Waveguide and Photodetector

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Photonic integrated circuits fabricated using quantum well intermixing

Suspended P–n Junction InGaN/GaN Multiple-Quantum-Well Device with Selectable Functionality

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

Quantum Dot Lasers and Integrated Guided-Wave Devices Monolithically Grown on Si

Integrated GaN Prism Array Self‐Powered Photodetector on Si for Ultraviolet Imaging and Communication

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

Tunable Quantum Dot Lasers Grown Directly on Silicon

Monolithic integration of embedded III-V lasers on SOI

Membrane-type Photonic Integration of InGaN/GaN Multiple-Quantum-well Diodes and Waveguide

Room-temperature Electrically Pumped InGaN-based Microdisk Laser Grown on Si

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

Progress on Si-Based Optoelectronic Devices and Integration

Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic Quantum Dot Discrete Mode Laser on SOI

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration