Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and Gamma points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at similar to 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurring in bulk semiconductors, is associated with a combination of several critical points. Additionally, extending into the vacuum ultraviolet energy spectrum are a series of newly observed oscillations representing optical transitions from valence bands to higher conduction bands of the monolayer MoS2 complex band structure. These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.

Broadband Nonlinear Optical Response of Monolayer MoSe2 under Ultrafast Excitation

Broadband Nonlinear Photoresponse of Monolayer Mose2

Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe<sub>2</sub>

Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2

Broadband optical properties of monolayer and bulk MoS2

Broadband saturable absorption responses of few-layered MoSe 2 nanosheets for all-solid-state Q-switched lasers

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets

High-Yield Exfoliation of Monolayer 1T’-MoTe 2 as Saturable Absorber for Ultrafast Photonics

Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer

High-Yield Exfoliation of Monolayer 1T'-Mote2 As Saturable Absorber for Ultrafast Photonics.

Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2

Layer‐Tunable Nonlinear Optical Characteristics and Photocarrier Dynamics of 2D PdSe 2 in Broadband Spectra

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Charge transfer mechanism on MoS$_2$ nanosheets in the presence of a semiconductor photoactive media

Isolating the Nonlinear Optical Response of a MoS$_2$ Monolayer under Extreme Screening of a Metal Substrate

Broadband Optical Properties Of Large-Area Monolayer Cvd Molybdenum Disulfide