Broadband Nonlinear Photoresponse of Monolayer Mose2

Zhonghui Nie,Edmund Kelleher,Kaihui Liu,Yongbing Xu,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_qels.2016.ftu1a.1

2016-01-01

Abstract:We report the first broadband nonlinear absorption characterization of CVD-grown intrinsic monolayer molybdenum diselenide (MoSe2) from 720-810 nm. A constant modulation depth of similar to 80% is revealed across the lowest energy excitonic absorption feature.

What problem does this paper attempt to address?

Broadband Nonlinear Optical Response of Monolayer MoSe2 under Ultrafast Excitation

Zhonghui Nie,Chiara Trovatello,Eva A. A. Pogna,Stefano Dal Conte,Paulo B. Miranda,Edmund Kelleher,Chunhui Zhu,Ion Crisitan Edmond Turcu,Yongbing Xu,Kaihui Liu,Giulio Cerullo,Fengqiu Wang

DOI: https://doi.org/10.1063/1.5010060

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Due to their strong light-matter interaction, monolayer transition metal dichalcogenides (TMDs) have proven to be promising candidates for nonlinear optics and optoelectronics. Here, we characterize the nonlinear absorption of chemical vapour deposition (CVD)-grown monolayer MoSe2 in the 720–810 nm wavelength range. Surprisingly, despite the presence of strong exciton resonances, monolayer MoSe2 exhibits a uniform modulation depth of ∼80 ± 3% and a saturation intensity of ∼2.5 ± 0.4 MW/cm2. In addition, pump-probe spectroscopy is performed to confirm the saturable absorption and reveal the photocarrier relaxation dynamics over hundreds of picoseconds. Our results unravel the unique broadband nonlinear absorptive behavior of monolayer MoSe2 under ultrafast excitation and highlight the potential of using monolayer TMDs as broadband ultrafast optical switches with customizable saturable absorption characteristics.
Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe2

Xiangling Tian,Rongfei Wei,Zhijun Ma,Jianrong Qiu

DOI: https://doi.org/10.1021/acsami.1c23053

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Optical modulation on ultrashort time scales is both of central importance and an essential operation for applications in photonics and optoelectronics. Here, with a giant bandgap renormalization due to a high density of carrier injected by a femtosecond pulse, we realize an expected broadband saturable absorption in chemical vapor deposition grown monolayer transition-metal dichalcogenide MoSe2. Our findings reveal the band edge shift from similar to 1.53 to similar to 0.52 eV under the pump excitation of 0.80 eV, which is induced by the nonequilibrium occupation of electron-hole states after a Mott transition as well as the increase of carrier temperature.
Broadband Ultrafast Nonlinear Absorption and Nonlinear Refraction of Layered Molybdenum Dichalcogenide Semiconductors

Kangpeng Wang,Yanyan Feng,Chunxia Chang,Jingxin Zhan,Chengwei Wang,Quanzhong Zhao,Jonathan N. Coleman,Long Zhang,Werner J. Blau,Jun Wang

DOI: https://doi.org/10.1039/c4nr02634a

IF: 6.7

2014-01-01

Nanoscale

Abstract:A series of layered molybdenum dichalcogenides, i.e., MoX₂ (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX₂ dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS₂ and MoSe₂ dispersions after higher speed centrifugation (10,000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc.
Broadband saturable absorption and exciton-exciton annihilation in MoSe 2 composite thin films

Gaozhong Wang,Aidan A. Baker-Murray,Xiaoyan Zhang,Daniel Bennett,Jing Jing Wang,Jun Wang,Kangpeng Wang,Werner J. Blau

DOI: https://doi.org/10.1364/ome.9.000483

2019-01-01

Optical Materials Express

Abstract:Polyvinyl alcohol (PVA) was utilized as a matrix to host two-dimensional (2D) liquid-phase-exfoliated MoSe2 nanosheets. These 2D MoSe2/PVA composite thin films were experimentally proven to be preferable for efficient nonlinear optical devices. Our nonlinear optical study shows that these composite thin films possess strong saturable absorption (SA) over a wide wavelength range from 400 nm to 800 nm under the irradiation of femtosecond and nanosecond lasers. The SA property of our films was measured for various laser pulse durations, wavelength and linear absorption. Moreover, employing pump-probe, exciton-exciton annihilation was experimentally observed and studied at 800 nm. Our research gives clear insight into the photophysical properties of MoSe2/PVA thin films and shows the material’s potential as a photonic device.
Multilayer MoS2 Photodetector with Broad Spectral Range and Multiband Response

Xia-Yao Chen,Dan Su,Ke-Han Li,Yuan-Jun Song,Peng Xia,Xiao-Yang Zhang

DOI: https://doi.org/10.34133/adi.0042

2024-01-01

Abstract:As a typical 2-dimensional material, molybdenum disulfide (MoS2) has atomic thickness in longitudinal size, showing unique optical and electrical properties. MoS2 has become a research hotspot in the field of photodetection. The properties of MoS2 devices are highly dependent on their material characteristics, device structures, and fabrication techniques. Therefore, their photoresponse characteristics may be determined by multiple physical effects, which contribute to the development of MoS2-based broadband photodetectors. Here, we present an experimental study on the broadband MoS2 photodetector ranging from 410 to 1,550 nm, obviously wider than that of conventionally reported MoS2 photodetectors. Our results indicate that the performance of the MoS2 device is dependent on the fabrication procedures. Under the optimal process, the maximum responsivity is 33.75 A W−1 and the corresponding specific detectivity is 6.1 × 1011 cm Hz1/2 W−1 at 480-nm illumination. Through a series of electrical and optoelectronic experimental analysis, the working mechanisms of multiband photoresponse of the MoS2 device are clarified.
Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Muhed S. Rana,Joshua R. Hendrickson,Christopher E. Stevens,Michael R. Koehler,David G. Mandrus,Takashi Taniguchi,Kenji Watanabe,Nai H. Kwong,Rolf Binder,John R. Schaibley

DOI: https://doi.org/10.48550/arXiv.2109.12160

2021-09-25

Abstract:Monolayer transition metal dichalcogenide (TMD) semiconductors such as MoSe$_2$ host strongly bound excitons which are known to exhibit a strong resonant third-order nonlinear response. Although there have been numerous studies of the ultrafast nonlinear response of monolayer TMDs, a study of the steady-state nonlinear response is lacking. We report a comprehensive study of the steady-state two-color nonlinear response of excitons in hBN-encapsulated monolayer MoSe$_2$ at 7 K. We observe differential transmission (DT) signals associated with the neutral and charged exciton species, which is strongly dependent on the polarization of the pump and probe. Our results are compared to a theoretical model based on a T-matrix formulation for exciton-exciton, exciton-trion, and trion-trion correlations. The parameters are chosen such that the theory accurately reproduces the experimental DT spectrum, which is found to be dominated by two-exciton correlations without strong biexciton binding, exciton-trion attractive interactions, and strong spin mixing through incoherent relaxation.

Mesoscale and Nanoscale Physics,Materials Science
Nonlinear Absorption and Integrated Photonics Applications of MoSSe.

Xiaobo Li,Xin Chen,Ning Wei,Chenduan Chen,Zhan Yang,Haijiao Xie,Jiajing He,Ningning Dong,Yaping Dan,Jun Wang

DOI: https://doi.org/10.1364/oe.465566

IF: 3.8

2022-01-01

Optics Express

Abstract:This study explores the wavelength-dependent and pulse-width-dependent nonlinear optical properties of liquid-phase exfoliated molybdenum sulfide selenide (MoSSe) nanosheets. The saturable absorption response of MoSSe nanosheets in the visible region is better than that in the near-infrared region, and the response under 6-ns pulse excitation is better than that of a 380-fs pulse. Furthermore, based on the first-principles calculations, we designed a phase modulator and optimized its structure by integrating a monolayer MoSSe into a silicon slot waveguide. The simulation results revealed that the phase shift could achieve a high optical extinction. Consequently, MoSSe exhibits satisfactory nonlinear optical properties and an excellent potential for applications in optoelectronic devices.
Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

Wei Li,A. Glen Birdwell,Matin Amani,Robert A. Burke,Xi Ling,Yi-Hsien Lee,Xuelei Liang,Lian‐Mao Peng,Curt A. Richter,Jing Kong,David J. Gundlach,Nhan V. Nguyen

DOI: https://doi.org/10.1103/physrevb.90.195434

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at
High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Tianyou Zhang,Yujie Chen,Pengfei Xu,Zeru Wu,Yanfeng Zhang,Lin Liu,Chunchuan Yang,Hui Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2016.af3f.5

2016-01-01

Abstract:High-responsivity ultra-sensitive photodetectors are crucial for a broad range of applications in various fields. This work demonstrates a highly sensitive photodetector fabricated by using monolayer molybdenum disulfide (MoS 2 ), a promising semiconductor from the family of transition-metal dichalcogenide, showing a promising photoresponsivity (230 mA/W @532 nm) in the wavelength of visible light region.
High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Yanfeng Zhao,Yuehong Ren,Cormac Ó Coileáin,Juncheng Li,Duan Zhang,Sunil K. Arora,Zhaotan Jiang,Han-Chun Wu

DOI: https://doi.org/10.1016/j.apsusc.2021.150399

IF: 6.7

2021-10-01

Applied Surface Science

Abstract:Recently, the design of broadband photodetectors based on 2D materials has been a subject of great attention. However, it remains a challenge to achieve both broadband detection and high responsivity for monolayer transition metal dichalcogenide based photodetectors due to the larger band gaps and limited absorption at monolayer thickness. Based on density functional theory calculations, we confirmed that a combination of vanadium substitution doping and Mo vacancies not only decrease the band gap but also enhance the light absorption of monolayer molybdenum diselenide We also synthesized MoSe2 with both V substitution doping and Mo vacancies by chemical vapor deposition and investigated the electrical and photoelectrical properties. Field effect transistor devices based on the materials showed a transition from n- to p-type characteristics and improved carrier mobility with increasing V concentration. Moreover, photodetectors based on monolayer MoSe2 with 6% V and Mo vacancies displayed a broadband spectral response from 365 nm to 2240 nm, and the responsivity reached 9700 mA W−1 and 2800 mA W−1 at 520 nm and 2240 nm, respectively. Our findings may be useful for designing monolayer transition metal dichalcogenide photodetectors with high responsivities in the infrared region.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
The nonlinear optical properties of molybdenum disulfide

feng zhou,junyi yang,yu fang,xuemei he,yinglin song

DOI: https://doi.org/10.1117/12.2202958

2015-01-01

Abstract:The third-order nonlinear optical response of molybdenum disulfide dissolved in ethanol was investigated using a modified time-resolved pumpeprobe measurement with phase object at 532 nm with pico-second laser pulse. The experimental results clearly indicate that the observed nonlinear response should be of excited-state origin. The compound exhibits strong saturable absorption and long excited-state lifetimes. The nonlinear absorptive and refractive parameters of the phenoxazinium salt were evaluated by combination of picosecond pumpeprobe measurements and picosecond Z-Scan experiments. The experiment results demonstrate this compound is a promising nonlinear optical material.
Broadband optical properties of monolayer and bulk MoS2

Georgy A. Ermolaev,Yury V. Stebunov,Andrey A. Vyshnevyy,Dmitry E. Tatarkin,Dmitry I. Yakubovsky,Sergey M. Novikov,Denis G. Baranov,Timur Shegai,Alexey Y. Nikitin,Aleksey V. Arsenin,Valentyn S. Volkov

DOI: https://doi.org/10.1038/s41699-020-0155-x

IF: 10.516

2020-07-10

npj 2D Materials and Applications

Abstract:Abstract Layered semiconductors such as transition metal dichalcogenides (TMDs) offer endless possibilities for designing modern photonic and optoelectronic components. However, their optical engineering is still a challenging task owing to multiple obstacles, including the absence of a rapid, contactless, and the reliable method to obtain their dielectric function as well as to evaluate in situ the changes in optical constants and exciton binding energies. Here, we present an advanced approach based on ellipsometry measurements for retrieval of dielectric functions and the excitonic properties of both monolayer and bulk TMDs. Using this method, we conduct a detailed study of monolayer MoS 2 and its bulk crystal in the broad spectral range (290–3300 nm). In the near- and mid-infrared ranges, both configurations appear to have no optical absorption and possess an extremely high dielectric permittivity making them favorable for lossless subwavelength photonics. In addition, the proposed approach opens a possibility to observe a previously unreported peak in the dielectric function of monolayer MoS 2 induced by the use of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding promoters for MoS 2 synthesis and thus enables its applications in chemical and biological sensing. Therefore, this technique as a whole offers a state-of-the-art metrological tool for next-generation TMD-based devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nonlinear Optical Absorption Properties of Molybdenum Selenide Water Solution

Yabin Shao,Chen Chen,Lingling Xiang,Yunfeng Song,Yang Hong,Fang He,Xinping Zhai

DOI: https://doi.org/10.1080/10584587.2024.2328861

2024-12-04

Integrated Ferroelectrics

Abstract:In recent years, with the invention of graphene, two-dimensional materials have received increasing attention. One of these materials, MXene, has been widely used in the field of photonics and non-linear optics due to its special physical properties. In this paper, the non-linear absorption properties of molybdenum selenide (MoSe 2 ) water solution composites at different wavelengths (500–650 nm) are investigated using Z-scan techniques. The experimental and computational results show that the material has strong saturation absorption (SA) properties and that the SA intensity decreases with the increase of wavelength at the same energy. It has potential application prospects in laser technology.

engineering, electrical & electronic,physics, condensed matter, applied
Nonlinear Optical Performance of Few-Layer Molybdenum Diselenide As a Slow-Saturable Absorber

Gaozhong Wang,Guangxing Liang,Aidan A. Baker-Murray,Kangpeng Wang,Jing,Xiaoyan Zhang,Daniel Bennett,Jing-Ting Luo,Jun Wang,Ping Fan,Werner J. Blau

DOI: https://doi.org/10.1364/prj.6.000674

IF: 7.6

2018-01-01

Photonics Research

Abstract:Two-dimensional transition metal dichalcogenides are considered promising materials for next-generation photonics and nano-optical devices. Although many previous reports have shown saturable absorption of molybdenum diselenide (MoSe2), these nonlinear optical (NLO) properties of MoSe2 were measured in separate works and under different conditions with their hot-carrier relaxations. Here, we conducted a series of coherent studies on the NLO properties of few-layer MoSe2 via open-aperture Z-scan and degenerate pump-probe techniques. These measurements were taken to test the materials' capabilities as a slow-saturable absorber. A slow-absorber model was employed to analyze the NLO measurements, and the results show that the NLO modulation depth was modeled to be 7.4% and 15.1% for the linear absorption coefficients of 5.22 cm(-1) and 6.51 cm-1, respectively. The corresponding saturated intensities were modeled to be 39.37 MW/cm(2) and 234.75 MW/cm(2), respectively. The excitation carrier recovery time of few-layer MoSe2 was measured by degenerate pump-probe techniques to be similar to 220 ps. These nonlinear optical performances make it a promising slow-saturable absorber for passive mode locking in femtosecond lasers. (C) 2018 Chinese Laser Press
Broadband photodetection using one-step CVD-fabricated MoS2/MoO2 microflower/microfiber heterostructures

D. Mouloua,N. S. Rajput,S. Saitzek,K. Kaja,K. Hoummada,M. El Marssi,M. A. El Khakani,M. Jouiad

DOI: https://doi.org/10.1038/s41598-022-26185-z

IF: 4.6

2022-12-21

Scientific Reports

Abstract:Abstract Molybdenum disulfide (MoS 2 ) has been combined so far with other photodetecting semiconductors as an enhancing agent owing to its optical and electronic properties. Existing approaches demonstrated MoS 2 -incorporated photodetector devices using complex and costly fabrication processes. Here, we report on simplified one-step on the chemical vapor deposition (CVD) based synthesis of a unique microfiber/microflower MoS 2 -based heterostructure formed by capturing MoO 2 intermediate material during the CVD process. This particular morphology engenders a material chemical and electronic interplay exalting the heterostructure absorption up to ~ 98% over a large spectral range between 200 and 1500 nm. An arsenal of characterization methods were used to elucidate the properties of these novel heterostructures including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry, high-resolution transmission and scanning electron microscopies, and Kelvin probe force microscopy. Our findings revealed that the MoS 2 and the MoO 2 crystallize in the hexagonal and monoclinic lattices, respectively. The integration of the MoS 2 /MoO 2 heterostructures into functional photodetectors revealed a strong photoresponse under both standard sun illumination AM1.5G and blue light excitation at 450 nm. Responsivity and detectivity values as high as 0.75 mA W −1 and 1.45 × 10 7 Jones, respectively, were obtained with the lowest light intensity of 20 mW cm −2 at only 1 V bias. These results demonstrate the high performances achieved by the unique MoS 2 /MoO 2 heterostructure for broadband light harvesting and pave the way for their adoption in photodetection applications.

multidisciplinary sciences
Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

Mingyuan Sheng,Xi Chang,Xiaojun Mao,Yang Gao,Xiaoyang Xuan,Haifen Xie,Haichuan Mu,Yueping Niu,Shangqing Gong,Min Qian

DOI: https://doi.org/10.1002/aelm.202300842

IF: 6.2

2024-05-31

Advanced Electronic Materials

Abstract:A Mo─O transient state is introduced to the edge of an as‐grown MoSe2 to achieve the stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer is developed based on capillary interaction in water‐ethanol solution. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse because of the effective separation of photogenerated electron‐hole pairs. The heterostructure of two‐dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as‐grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high‐quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built‐in electric field within the heterojunction facilitates the effective separation of photogenerated electron‐hole pairs. This study carries profound implications for the CVD growth and polymer‐free transfer of TMDC heterostructures in photodetector applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Wei Li,A. Glen Birdwell,Matin Amani,Robert A. Burke,Xi Ling,Yi-Hsien Lee,Xuelei Liang,Lianmao Peng,Curt A. Richter,Jing Kong,David J. Gundlach,N. V. Nguyen

DOI: https://doi.org/10.1103/PhysRevB.90.195434

2014-07-26

Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical <a class="link-external link-http" href="http://points.These" rel="external noopener nofollow">this http URL</a> optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.

Mesoscale and Nanoscale Physics,Materials Science
Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2

Eva A. A. Pogna,Margherita Marsili,Domenico De Fazio,Stefano Dal Conte,Cristian Manzoni,Davide Sangalli,Duhee Yoon,Antonio Lombardo,Andrea C. Ferrari,Andrea Marini,Giulio Cerullo,Deborah Prezzi

DOI: https://doi.org/10.1021/acsnano.5b06488

2017-04-21

Abstract:Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broadband probing, to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, upon photoexcitation of different excitonic transitions. We find that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. First-principle modeling of the ultrafast optical response reveals that a transient bandgap renormalization, caused by the presence of photo-excited carriers, is primarily responsible for the observed features. Our results demonstrate the strong impact of many-body effects in the transient optical response of TMDs even in the low-excitation-density regime.

Materials Science,Mesoscale and Nanoscale Physics
Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure

Tao Yang,Xing Li,Liming Wang,Yiming Liu,Kaijian Chen,Xun Yang,Lei Liao,Lin Dong,Chong-Xin Shan

DOI: https://doi.org/10.1007/s10853-019-03963-1

IF: 4.5

2019-09-03

Journal of Materials Science

Abstract:Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi2O2Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi2O2Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe2 can form a type-II heterojunction with Bi2O2Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi2O2Se and few-layer MoSe2, showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the Ion/Ioff ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W−1, a high detectivity of 3.7 × 1011 Jones (at 780 nm) at room temperature. Compared with the 2D Bi2O2Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi2O2Se/MoSe2 heterojunction has a great potential for broadband and fast photodetection.

materials science, multidisciplinary

Broadband Nonlinear Photoresponse of Monolayer Mose2

Broadband Nonlinear Optical Response of Monolayer MoSe2 under Ultrafast Excitation

Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe<sub>2</sub>

Broadband Ultrafast Nonlinear Absorption and Nonlinear Refraction of Layered Molybdenum Dichalcogenide Semiconductors

Broadband saturable absorption and exciton-exciton annihilation in MoSe 2 composite thin films

Multilayer MoS2 Photodetector with Broad Spectral Range and Multiband Response

Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Nonlinear Absorption and Integrated Photonics Applications of MoSSe.

Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

The nonlinear optical properties of molybdenum disulfide

Broadband optical properties of monolayer and bulk MoS2

Nonlinear Optical Absorption Properties of Molybdenum Selenide Water Solution

Nonlinear Optical Performance of Few-Layer Molybdenum Diselenide As a Slow-Saturable Absorber

Broadband photodetection using one-step CVD-fabricated MoS2/MoO2 microflower/microfiber heterostructures

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2

Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure