High-pressure-assisted Synthesis of High-Volume ZnGeP2 Polycrystalline

Changbao Huang,Haixin Wu,Ruichun Xiao,Shijing Chen,Jiaren Ma
DOI: https://doi.org/10.1016/j.jcrysgro.2018.01.027
IF: 1.8
2018-01-01
Journal of Crystal Growth
Abstract:The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinearoptical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the highpressure-resisted method can be used to rapidly synthesize other pmctide and chalcogemde semiconductors and control the components ratio. (C) 2018 Published by Elsevier B.V.
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