Growth and Characterization of ZnGeP2 Single Crystals by the Modified Bridgman Method
Xin Zhao,Shifu Zhu,Beijun Zhao,Baojun Chen,Zhiyu He,Ruilin Wang,Huiguang Yang,Yongqiang Sun,Jiang Cheng
DOI: https://doi.org/10.1016/j.jcrysgro.2008.08.065
IF: 1.8
2008-01-01
Journal of Crystal Growth
Abstract:A good quality ZnGeP2 (ZGP) single crystal 15mm in diameter and 40mm in length was grown in a vertical three-zone tubular furnace by the modified Bridgman method, i.e. real-time temperature compensation technique (RTTCT) with descending ampoule. The starting material is high-pure and single-phase polycrystal of ZnGeP2 synthesized by the single-temperature zone and mechanical oscillation method (STZMOM). The as-grown single crystal was characterized by various methods, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analyzer of X-ray (EDAX), and IR and UV spectrophotometers. It is found that there is a cleavage face of (112) and second-order XRD peaks of the {112} faces are observed, the IR transmittance of a sample of 2mm thickness is above 55% in the range from 6000 to 800cm−1, the absorption edge is near 612.5nm and the band gap is about 2.02eV. The absorption coefficient (α) is within 0.015–0.022cm−1 at the spectral region 2–8μm. The crystal has a stoichiometry ratio Zn:Ge:P=1:1.12:1.91 which is close to the ideal stoichiometry ratio of 1:1:2. All results demonstrate that the modified growth method is a new and promising method for the ZGP single crystal and the quality of as-grown crystal is good.