Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

Rapid Thermal Processing of Hafnium Dioxide Thin Films by Remote Plasma Atomic Layer Deposition As High-K Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Annealing behaviors of structural, interfacial and optical properties of HfO 2 thin films prepared by plasma assisted reactive pulsed laser deposition

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Structure and Dielectric Properties of HfO2 Thin Films

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Hysteresis-free HfO2 Film Grown by Atomic Layer Deposition at Low Temperature

The Post-Deposition Anneal Effects On The Electrical Properties Of Hfo2 Gate Dielectric Deposited By Ion Beam Sputtering At Room Temperature

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Effect of annealing on the properties of plasma-enhanced atomic layer deposition grown HfO 2 coatings for ultraviolet laser applications

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO $_{\text{2}}$ Film by Fast Ramping and Fast Cooling Process