Abstract:Heterovalent doped (K0.48-0.07x Na0.52-0.43x Bi0.5x )(Nb0.95-0.95x Sb0.05-0.05x Zr x )O3 ceramics were fabricated using conventional solid-state reaction. Then, the phase structures, dielectric, ferroelectric, and electric-strain properties were investigated. The compositions were tuned to be located at polymorphic phase boundary with increasing heterovalent Bi3+ and Zr4+ doping levels. A large strain of 0.19% was obtained at relatively low electric fields of 30 kV/cm in the composition of x = 0.04. The normalized large-signal d 33* values were approximately 633 pm/V under a low driving electric field of 30 kV/cm, which were comparable or larger than the values reported for other lead-free families. The large strains obtained can be attributed to the formation of nanodomains and high-density domain walls, which were confirmed by the observations of domain morphology using transmission electron microscopy (TEM) technique. Excellent temperature stability of the strain properties of the x = 0.04 sample could be ascribed to the sluggish behaviour for the local structural heterogeneity in heterovalent-ion doped KNN ceramic. Theoretical simulations revealed that the Zr4+ produce the local stress at the BO6 octahedra and Bi3+ could yield off-centering of AO12 ployhedron due to the nature of Bi 6s lone pair electrons, which induced lattice expansion and local distortions in the sample. The local displacements are strongly anisotropic in heterovalent-ion doped system. It is believed that random local fields exist in these compositions owing to the eixstence of charge distribution. Such heterovalent doping of Bi3+ and Zr4+ could destory simutiously the orthorhombic symmetry and the short-range ferroelecctric order, leading to the formation of complex nanodomains and local structral hetergenenity. Heterovalent doping may, therefore, offer a new avenve to design novel K0.5Na0.5NbO3 (KNN) -based materials for their mutifunctional applications.

Non-volatile Strain Realized in the PNZST Ceramics by K Doping

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Large electrical strain in lead-free K0.5Na0.5NbO3-based ceramics by heterovalent doping

High Electrostrictive Strain Induced by Defect Dipoles in Acceptor-Doped (K0.5na0.5)nbo3ceramics

The Evolution Mechanism of Defect Dipoles and High Strain in MnO2-doped KNN Lead-Free Ceramics

Defect-mediated Domain-Wall Motion and Enhanced Electric-Field-induced Strain in Hot-Pressed K0.5Na0.5NbO3 Lead-Free Piezoelectric Ceramics

Improving High-Field Strain and Temperature Stability on KNN-based Ceramics Sintered in Reducing Atmosphere Via Defect Engineering

Bipolar loop-like non-volatile strain in the (001)-oriented Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 single crystals

Large Recoverable Electrostrain in Mn-Doped (ba,sr) Tio3 Ceramics

Dramatic Influence of Dy3+ Doping on Strain and Domain Structure in Lead-Free Piezoelectric 0.935(na1/2bi1/2)tio3−0.065batio3 Ceramics

Ferroelectric stability and fatigue mechanism of BNKT ceramics by Nb doping

Defect Dipole Induced Large Recoverable Strain and High Energy-Storage Density in Lead-Free Na0.5Bi0.5TiO3-based Systems

Enhancement of Strain by Electrically-Induced Phase Transitions in BNKT-based Ceramics

Achieving Ultrahigh Piezoactuation Constant of 2240 Pm/v and Giant Electrostrain of 1.12% Simultaneously in BNT-based Polycrystalline Ceramics

Ultrahigh electro-strain in acceptor-doped KNN lead-free piezoelectric ceramics via defect engineering

Multifold Polar States in Zn-doped Sr 0.9 Ba 0.1 TiO 3 Ceramics

Giant Strain Response in 2 Mol% Nb-doped (bi 0.5 Na 0.4 K 0.1 )tio 3 Lead-Free Ceramics

Electro-Shape-Memory Effect in Mn-Doped (pb, Sr)Tio3 Ceramics

Large Strain Response in Li/Nb Co-Doped Bi0.5(Na0.8K0.2)0.5TiO3 Lead-Free Piezoceramics

Electric Field-Induced Large Strain in Ni/Sb-co Doped (bi0.5na0.5) TiO3-Based Lead-Free Ceramics

Giant electric field-induced strain and structure evolution of NaTaO3-modified 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 Pb-free ceramics