Design of Temperature Compensation for Silicon-Sapphire Pressure Sensor

Huang Manguo,Liu Defeng,Lu Chao,Guo Zhanshe,Li Xin
DOI: https://doi.org/10.1109/ist.2017.8261481
2017-01-01
Abstract:In order to solve the problem that the temperature drift of the silicon-on-sapphire pressure sensor is too large to reduce the accuracy of pressure measurement at high temperature, a temperature compensation scheme based on a single chip is proposed. The temperature of the working environment is obtained by a PT100, and integrated with the output of pressure sensor to calculate the compensated pressure sensor. Problems of power supply and signal acquisition are solved by the high precision, low drift voltage and current references, programmable amplifiers and high precision ADCs on chip. According to the working characteristics of the silicon-on-sapphire pressure sensor, an efficient temperature compensation algorithm is designed, and written to the on-chip ARM processor. The experimental results show that the maximum measurement error of pressure in the temperature range of -20~250°C and measurement range of 0~28 MPa is 8.37%FS before compensation and reduced to 0.3%FS after compensation. The accuracy of the sensor is greatly improved by the compensation system.
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